High-Precision Symmetric Weight Update of Memristor by Gate Voltage Ramping Method for Convolutional Neural Network Accelerator

Jia Chen,Wen-Qian Pan,Yi Li,Rui Kuang,Yu-Hui He,Chih-Yang Lin,Nian Duan,Gui-Rong Feng,Hao-Xuan Zheng,Chang,Simon M. Sze,Xiang-Shui Miao
DOI: https://doi.org/10.1109/led.2020.2968388
IF: 4.8157
2020-01-01
IEEE Electron Device Letters
Abstract:Memristor emerges as the key enabler for neural network accelerator. Here, we demonstrate high-precision symmetric weight update in a one transistor one resistor (1T1R) structure Ti/HfO2/TiN memristor using a gate voltage ramping method, with over 120-level states and low variation (< 4%). Incorporating all experimental non-idealities, the proposed mixed hardware-software convolutional neural network demonstrates over 92.79% online learning accuracy (against software equivalent 98.45%) for MNIST recognition task. The network also shows robustness to input image noises, array yield, and retention issues.
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