Halogen surface modification induced strong interfacial electric field for efficient photocatalytic H 2 O 2 generation

Yue An,Tongyao Liu,Na Tian,Wenying Yu,Yihe Zhang,Hongwei Huang
DOI: https://doi.org/10.1016/j.colsurfa.2024.133849
IF: 5.518
2024-04-14
Colloids and Surfaces A Physicochemical and Engineering Aspects
Abstract:Bi 2 O 2 (NO 3 )(OH) (BON) and g-C 3 N 4 (CN) as highly efficient semiconductor photocatalytic materials, have attracted much attention in the field of environmental remediation and clean energy production because of their unique two-dimensional layered structures. However, the narrow light absorption range of a single semiconductor and the low separation efficiency of photoexcited electron-hole pairs seriously restrict their photocatalytic activity. Based on these key scientific issues, we take BON/CN heterojunction system as the research model to explore the effect of promoting interfacial charge separation and transport on photocatalytic H 2 O 2 production via halogen surface modification on BON. X-ray photoelectron spectroscopy, in-situ Kelvin-probe force microscopy and photoelectrochemical measurements demonstrate that the formation of BON-I/CN Z-scheme junction renders efficient charge separation and migration, considerably contributing to the rapid H 2 O 2 generation via a two-step one-electron route, in addition to the enhanced photoabsorption. Thus, BON-I1/CN exhibited the highest photocatalytic H 2 O 2 production rate of 481.9 μmol L −1 h −1 , much higher than that of pure BON, CN, BON/CN, BON-Cl1/CN and BON-Br1/CN. This work provides an effective strategy for efficiently promoting photocatalytic production of H 2 O 2 .
chemistry, physical
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