Band Bending and Valence Band Shifting of Sub-Monolayer TiO2 Functionalized SnO2 Nanowires

Hong-Bo Wang,Fei Ma,Yang-Shuo Sun,Liang Zhou,De-Jun Zeng,Yi Qin,Yi-Ku Xu,Yong-Nan Chen,Ke-Wei Xu,Da-Yan Ma
DOI: https://doi.org/10.1007/s10854-019-02569-2
2019-01-01
Journal of Materials Science Materials in Electronics
Abstract:Sub-monolayer TiO2 over-layers were deposited on SnO2 nanowires (NWs) by atomic layer deposition. X-ray photoelectron spectroscopy, Mott–Schottky plots and photoluminance spectra were used to investigate the band structure and the separation of electron–hole pairs at the SnO2/TiO2 interface. The results showed that the valence band maximum of SnO2 NWs shifted to lower binding energies after functionalization, and significant upward band edge bending at the interface was confirmed. The rearrangement of energy band accelerated the separation of photo-generated electron–hole pairs leading to the improvement of photocatalytic degradation rate of methyl orange (MO, C14H14N3NaO3S) under UV irradiation.
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