Boosting Ionic Conductivity in Antiperovskite Li3OCl Via Defect Engineering: Interstitial Versus Vacancy

Pai Li,Fiaz Hussain,Ping Cui,Zhenyu Li,Jinlong Yang
DOI: https://doi.org/10.1103/physrevmaterials.3.115402
IF: 3.98
2019-01-01
Physical Review Materials
Abstract:Ion transport in solid materials is frequently facilitated by defects. It is thus attractive to increase ionic conductivity by introducing proper types of defects. In antiperovskite Li3OCl, a promising solid-state electrolyte material, a Li interstitial is predicted to be superior to Li vacancy for Li ion transport. However, the Li interstitial is difficult to dope into Li3OCl and it typically comes with a charge-compensating O'(Cl) substitutional defect, which is a Li trap and thus hampers Li ion transport. In this study, a protocol to enhance Li interstitial formation via S doping is proposed. With a S'(Cl) charge-compensating defect, the Li interstitial becomes more stable than Li vacancy. At the same time, thanks to a cancellation of two different contributions, S'(Cl) has little effect on the Li local electrostatic environment and thus ion transport. As a result, Li interstitial conductivity can be boosted from 3.822 x 10(-4) to 1.286 mS/cm upon S doping, which leads to a 1-order-of-magnitude increase of the overall ionic conductivity. Such a significant performance enhancement via defect engineering opens an alternative avenue for the design of battery materials.
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