Abstract:The past years have seen the rapid development of halide perovskite solar cells, light emission diodes (LEDs), X-ray detectors, and photodetectors, due to the superior optoelectronic properties of perovskite materials, such as tunable bandgap, long carrier diffusion length, and high carrier mobility. Up to now, polycrystalline perovskite solar cells hold a record efficiency of over 25%, which is comparable with the commercialized Si solar cells. Further improving the optoelectronic devices requires tailoring the crystal growth process which is crucial to reduce the defect density and inhibit carrier recombination. Another way to enhance the device performance is the utilization of perovskite single crystals that possess much better electrical properties than polycrystalline perovskites. The main drawbacks of bulk perovskite single crystals include difficult substrate integration, too large thickness, inefficient carrier collection, low photoluminescence quantum yield (PLQY), etc. To take full advantage of the superior properties of perovskite single crystals, thickness and morphology control are necessary. In order to fully understand the formation of polycrystalline thin films, Kumar et al. reviewed the fabrication process of polycrystalline thin films and the critical factors influencing the crystal growth. This review described three techniques to optimize the film morphology and device performance: substrate temperature treatment, antisolvent treatment, and cosolvent engineering. They think the key parameter deciding the nucleation and subsequent growth of the nucleated particles is the Gibbs free energy. Through changing substrate temperature to control the volatilization rate of solvent or dripping antisolvent, the grain size and coverage of thin films can be modulated. Apart from this, the solvent boiling point, coordination affinity, and dipole strength also play a significant role in deciding the ultimate film morphology, defect density, and charge transfer resistance. This review is instructive for an understanding of crystallization process of perovskite films, which is beneficial for regulating defect density in the active layer to suppress ion migration and improve material properties. Perovskite single crystals are ideal candidates for X-Ray detectors due to their large carrier mobility-lifetime product. A key challenge is growing large single crystals with controlled thickness directly on substrates. To this end, Feng et al. reported the growth of methylammonium lead tribromide (MAPbBr3) single crystals directly on indium tin oxide (ITO) substrates through inverse temperature crystallization and succeeded in controlling the thickness of the crystal wafer through regulating the distance between solution surface and substrate. When the crystal surface is close to the solution surface, the vertical growth stops while the lateral growth continues, thus resulting in a thickness-controlled, substrate-integrated, and inch-sized single-crystal wafer. The crystal thicknesses can be adjusted from 1 to 3.5 mm. Subsequently, through surface polishing and O3 treatment, the surface traps are passivated, leading to X-Ray detectors with a sensitivity of 632 μC Edited and reviewed by: Andrzej Grzechnik, RWTH Aachen University, Germany

Direct Growth of Perovskite Crystals on Metallic Electrodes for High-Performance Electronic and Optoelectronic Devices.

Investigation of Electrode Electrochemical Reactions in CH3NH3PbBr3 Perovskite Single‐Crystal Field‐Effect Transistors

Novel Direct Nanopatterning Approach to Fabricate Periodically Nanostructured Perovskite for Optoelectronic Applications

All-inorganic Perovskite by Vapor Phase Deposition for Optoelectronic Applications

Wafer-scale growth of large arrays of perovskite microplate crystals for functional electronics and optoelectronics

Crystalline Liquid-like Behavior: Surface-Induced Secondary Grain Growth of Photovoltaic Perovskite Thin Film

Growth of centimeter-scale perovskite single-crystalline thin film via surface engineering

Controllable Growth of High-Quality Inorganic Perovskite Microplate Arrays for Functional Optoelectronics

Editorial: Hybrid Perovskite Crystals Design, Growth, and Their Photoelectric Properties

Single crystal hybrid perovskite field-effect transistors

Large‐Scale Perovskite Single Crystal Growth and Surface Patterning Technologies

A fabrication process for flexible single-crystal perovskite devices

Rapid Growth of Halide Perovskite Single Crystals: from Methods to Optimization Control

Progress of Metal Halide Perovskite Crystals from a Crystal Growth Point of View

Investigation of Electrode Electrochemical Reactions in CH3 NH3 PbBr3 Perovskite Single-Crystal Field-Effect Transistors

Metal Halide Perovskite Single Crystals: from Growth Process to Application

Field-Effect Transistors Based on Van-Der-waals-grown and Dry-Transferred All-Inorganic Perovskite Ultrathin Platelets.

Surface-Tension-Dominant Crystallization of 2D Perovskite Single Crystals for Vertically Oriented Hetero-/Homo-Structure Photodetectors.

Fast Liquid Phase Epitaxial Growth For Perovskite Single Crystals

A General Wet Transferring Approach for Diffusion-Facilitated Space-Confined-Grown Perovskite Single-Crystalline Optoelectronic Thin-Films.

Direct Vapor Growth of Perovskite CsPbBr3 Nanoplate Electroluminescence Devices.