Abstract:Manipulating and reserving the valley pseudospin of excitons is one core aim in the two-dimensional transition metal dichalcogenides (TMDs). However, due to the strong electron-hole exchange and spin-orbit coupling interactions, the exciton recombination lifetime is subject to picosecond timescale intrinsically, and the valley polarization is hardly modulated by a moderate magnetic field. It is fortunate that interlayer and defect-localized excitons promise to overcome these difficulties by suppressing the above interactions. Here we clearly reveal that the valley polarization can be reversed and revived in the defect-localized excitons with a microsecond lifetime in AB-stacked WSe2-WS2 heterobilayer. Specifically, for the interlayer defect-localized exciton, the valley polarization is reversed and can be efficiently enhanced by a weak out-of-plane magnetic field (<0.4 T). In sharp contrast, the valley polarization of the intralayer defect-localized exciton can revive after a fast decay process and follows the direction of the moderate out-of-plane magnetic field (<3 T). We explain the reversed valley polarization with highly magnetic sensitivity by the delocalization of defect-localized holes under a weak magnetic field and the revival of valley polarization by the valley Zeeman effect under a moderate magnetic field. Our results demonstrate that the valley pseudospin of defect-localized excitons can be efficiently modulated by the external magnetic field and enrich both the understanding and the technical approaches on manipulating the valley dynamics in TMDs and their heterostructure.

Robust Circular Polarization of Indirect Q-K Transitions in Bilayer 3R−WS2

Ultrafast Investigation of Room Temperature Valley Polarization in “optical Bilayer” WS 2

Anomalously Robust Valley Polarization and Valley Coherence in Bilayer WS2

Transport and Spatial Separation of Valley Coherence Via Few Layer WS2 Exciton-Polaritons

Valley-selective Circular Dichroism of Monolayer Molybdenum Disulphide

Valley-Dependent Optoelectronics From Inversion Symmetry Breaking

Understanding Variations in Circularly Polarized Photoluminescence in Monolayer Transition Metal Dichalcogenides

Valley-polarized exciton–polaritons in a monolayer semiconductor

All-Optical Valley Polarization Switch Via Controlling Spin-Triplet and Spin-Singlet Interlayer Exciton Emission in WS2/WSe2 Heterostructure.

Unveiling exceptionally robust valley contrast in AA- and AB-stacked bilayer WS 2 .

Room temperature interlayer exciton valley polarization and valley Hall effect

Ab initio calculations of ultra-short carrier dynamics in 2D materials: valley depolarization in single-layer WSe$_2$

Magnetically-Sensitive Valley Polarization Reversal and Revival of Defect-Localized Excitons in WSe2-WS2

Optically and magnetically addressable valley pseudospin of interlayer excitons in bilayer MoS2

Valley-Splitting and Valley-Dependent Inter-Landau-Level Optical Transitions in Monolayer Mos2 Quantum Hall Systems

Valley-polarized Local Excitons in WSe2/WS2 Vertical Heterostructures.

Phonon-Limited Valley Polarization in Transition-Metal Dichalcogenides.

Enhancement of Valley Polarization in Monolayer WSe2 Coupled with Microsphere‐Cavity‐Array

Switching of K-Q Intervalley Trions Fine Structure and Their Dynamics in N-Doped Monolayer WS2

Valley coherent exciton-polaritons in a monolayer semiconductor

Spontaneous Valley Polarization and Electrical Control of Valley Physics in Single-Layer TcIrGe2S6