Study of Secondary Electron Emission from Semiconductors Induced by Electrons from 20 Ev to 800 Ev and Surface State of Semiconductors

Ai-Gen Xie,Yang Yu,Chen-Nan Song,Ya-Yi Chen

DOI: https://doi.org/10.1016/j.rinp.2019.102724

IF: 4.565

2019-01-01

Results in Physics

Abstract:Based on processes and characteristics of secondary electron emission (SEE), experimental data and the relations among parameters of secondary electron yield from semiconductors delta, the formula for delta in the range of 20 eV <= E-po <= 800 eV of semiconductors with E-pom <= 800 eV as a function of E-po, E-pom atomic number Z and maximum delta (delta(m)) was deduced and proved experimentally, where E-po and E-pom are incident energy of primary electron and the E-po of delta(m), respectively. From the existing formula and the relation among Z, mean escape depth of secondary electrons emitted from semiconductors and primary range R at E-pom deduced in this study, the formula for R in the range of 150 eV <= E-po <= 800 eV in monocrystalline semiconductors with E-pom <= 800 eV, chi >= 0.6 eV and E-g >= 0.6 eV was successfully deduced, where chi is original electron affinity, E-g is the width of forbidden band. The method of calculating B(chi(real), E-g) of semiconductor with E-pom <= 800 eV, chi(real )>= 0.5 eV and E-g >= 0.6 eV and that of calculating B of semiconductor with E-pom <= 800 eV were presented, respectively; Where B is the probability that an internal secondary electron escapes into vacuum upon reaching the surface of semiconductor, and the B(chi(real), E-g) is the B relative to semiconductor with E-g and real electron affinity chi(real). It can be concluded that the two methods are correct. From the analysis of calculated B, experimental E-pom and relations among parameters of SEE, it can be concluded that this paper can research the surface state of semiconductor with E-pom <= 800 eV by SEE.