Abstract:The valley-related multiple topological phase transitions attracted significant attention due to their providing significant opportunities for fundamental research and practical applications. However, unfortunately, to date there is no real material that can realize valley-related multiple topological phase transitions. Here, through first-principles calculations and model analysis, we investigate the structural, magnetic, electronic, and topological properties of VSiXN$_4$ (X = C, Si, Ge, Sn, Pb) monolayers. VSiXN$_4$ monolayers are stable and intrinsically ferrovalley materials. Intriguingly, we found that the built-in electric field and strain can induce valley-related multiple topological phase transitions in the materials from valley semiconductor to valley-half-semimetal, to valley quantum anomalous Hall insulator, to valley-half-semimetal, and to valley semiconductor (or to valley-metal). The nature of topological phase transition is the built-in electric field and strain induce band inversion between the d$_{xy}$/d$_{x2-y2}$ and d$_{z2}$ at obritals at K and K' valleys. Our findings not only reveal the mechanism of multiple topological phase transitions, but also provides an ideal platform for the multi-field manipulating the spin, valley, and topological physics. It will open new perspectives for spintronic, valleytronic, and topological nanoelectronic applications based on these materials.

The Coexistence of Ferroelectricity and Topological Phase Transition in Monolayer Α-In2se3 under Strain Engineering.

Ferroelectric Domain and Switching Dynamics in Curved In2Se3: First-Principles and Deep Learning Molecular Dynamics Simulations.

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Strain Engineering for 2D Ferroelectricity in Lead Chalcogenides

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Domain Structures and Phase Diagram in 2D Ferroelectrics under Applied Biaxial Strains - Phase Field Simulations and Thermodynamic Calculations

Giant Bandgap Engineering in Two-Dimensional Ferroelectric Α-In2se3.

Ferroelectrically tunable topological phase transition in In$_2$Se$_3$ thin films

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Manipulating Topological Phase Transition by Strain.

Strain and U driven phase transitions in monolayer intrinsic ferrovalleyNbIn2As2Se2

Non-volatile control of topological phase transition in an asymmetric ferroelectric In2Te2S monolayer

Strain and U driven phase transitions in monolayer intrinsic ferrovalley NbIn2As2Se2

Engineering a Topological Phase Transition in Β-Inse Via Strain

Topological Phase Transition with Nanoscale Inhomogeneity in (Bi_1-Xin_x)_2se_3

Uniaxial strain-induced phase transition in the 2D topological semimetal IrTe2

Biaxial strain induced multiple magnetic phase transitions in nonmagnetic transition metal halide monolayer

Built-in electric field and strain tunable valley-related multiple topological phase transitions in VSiXN$_4$ (X= C, Si, Ge, Sn, Pb) monolayers

Magnetic Phase Transition in Strained Two-Dimensional CrSeTe Monolayer

Magnetic Topological Insulators with Switchable Edge and Corner States in Monolayer VSi2P4

Strain-tunable Out-of-plane Polarization in Two-Dimensional Materials