Abstract:Nano-science and nano-technology are a significant scientific field of research. As one of the leading universities in China, Tsinghua University has carried out the education of nano-science and nano-engineering in both the undergraduate and the graduate levels. By the education of nano-science and nano-engineering, many important achievements of nano-science and nano-technology have been made in Tsinghua University. For example, our group has carried out researches on synthesis, structure and property of one-dimensional (ID) nano-materials. First, size effects on the crystal structure of Ag nanowires and on Young's modulus in [0001] oriented ZnO nanowires, respectively, have been revealed and modeled. The former is concerning the systemic energy of an individual Ag nanowire. The latter is caused by the surface stiffening effect arising from surface relaxation induced bond length contractions in the ZnO nanowires. Second, structures of ID helical nano-materials including SWCNT (single-walled carbon nanotube), B-DNA and MWCNT (mutli-walled carbon nanotube) have been studied. It is shown that there is strong orientation dependence of diffraction intensities from SWCNT and B-DNA, which can even result in certain layer lines missing in their diffraction patterns. Also, it is demonstrated that high-resolution transmission electron microscope (TEM) images of sidewall regions of MWCNTs are not structural ones and from the interference of the {0002} and the {101̄1} diffraction waves. Third, arrays of four types of 1D heterojunctions have been synthesized. Among these ID heterojunctions, the interfacial structures of the Ni/MWCNT/a- CNT(amorphous carbon nanotube) heterojunctions show that multiple outer walls in the MWCNTs can simultaneously participate in electrical transport. The electrical properties of the Ni/MWCNT/a-CNT and the Ag/a-CNT heterojunctions have been measured. As a result, it is found that the contacts between the Ag nanowires and the a-CNTs are ohmic ones with universal significance, and that each Ni/MWCNT/ a-CNT contains two diodes connected in series face-to-face. Moreover, most of the diodes have the most nearly ideal characteristics of Schottky contacts, indicated by quantitative analysis with the thermionic emission theory. Last, our group has developed a novel technique for rapidly producing large-area highly-oriented Si nanowire arrays on Si wafers by scratching the Si surface with metal nanoparticles near room temperature in HF solution. By this method, Si nanowires with desirable axial crystallographic directions, desirable doping characteristics and remarkable antireflection property can be readily obtained. The Si nanowire arrays have the potential applicability as an antireflective layer for photovoltaic devices and optical detectors. Furthermore, a combination of this method and the nanosphere lithography has been developed to fabricate large-scale Si and Si 1-xGex quantum dot arrays with controllable height, diameter and center-to-center distance. © 2006 Materials Research Society.

High Yield Production of Ultrathin Fibroid Semiconducting Nanowire of Ta_2Pd_3Se_8

Water-Assisted Preparation of High-Purity Semiconducting (14,4) Carbon Nanotubes

High Yield Production of Ultrathin Fibroid Semiconducting Nanowire of Ta2Pd3Se8 (vol 13, Pg 1627, 2020)

Using Nanoscale Thermocapillary Flows to Create Arrays of Purely Semiconducting Single-Walled Carbon Nanotubes

Wafer-Scale Growth of One-Dimensional Transition-Metal Telluride Nanowires

G030084 Fabrication of High Density Cu Nanowire Array by Template Method and Its Evaluation

Controlled Vapor-Liquid-Solid Growth of Long and Remarkably Thin Pb 1- x Sn x Te Nanowires with Strain-Tunable Ferroelectric Phase Transition

First sub-kilogram-scale synthesis of high quality ultrathin tellurium nanowires

Scalable Fabrication of Quasi-One-Dimensional van der Waals Ta2Pt3Se8 Nanowire Thin Films via Solution Processing for NO2 Gas Sensing over Large Areas

Characterization of Ultrathin Superconducting FeSe Nanowires on SrTiO3 Substrates

High-Yield Exfoliation of Ultrathin 2D Ni<sub>3</sub>Cr<sub>2</sub>P<sub>2</sub>S<sub>9</sub> and Ni<sub>3</sub>Cr<sub>2</sub>P<sub>2</sub>Se<sub>9</sub> Nanosheets

Synthesis of Narrow SnTe Nanowires Using Alloy Nanoparticles

Size dependence in one-dimensional nano-materials and one-dimensional heterojunctions

High‐Yield Exfoliation of Ultrathin 2D Ni 3 Cr 2 P 2 S 9 and Ni 3 Cr 2 P 2 Se 9 Nanosheets

Growth of PbTe nanowires by Molecular Beam Epitaxy

Novel fabrication and optoelectronic property of semiconductor filaments by optical-fiber thermal drawing

Thickness-Tunable Synthesis of Ultrathin Type-II Dirac Semimetal PtTe2 Single Crystals and Their Thickness-Dependent Electronic Properties

Phase-engineered synthesis of atomically thin te single crystals with high on-state currents

Controllable Fabrication and Electrical Performance of Single Crystalline Cu2O Nanowires with High Aspect Ratios

High-yield production of mono- or few-layer transition metal dichalcogenide nanosheets by an electrochemical lithium ion intercalation-based exfoliation method