Abstract:The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We demonstrate single-photon emission from two-dimensional ordered arrays of GaN nanowires containing InGaN nano-disks. The structures were fabricated by molecular beam epitaxy on (0001) GaN-on-sapphire templates patterned with nanohole masks prepared by colloidal lithography. Low-temperature cathodoluminescence measurements reveal the spatial distribution of light emitted from a single nanowire heterostructure. The emission originating from the topmost part of the InGaN regions covers the blue-to-green spectral range and shows intense and narrow quantum dot-like photoluminescence lines. These lines exhibit an average linear polarization ratio of 92%. Photon correlation measurements show photon antibunching with a g(2)(0) values well below the 0.5 threshold for single photon emission. The antibunching rate increases linearly with the optical excitation power, extrapolating to the exciton decay rate of ~1 ns-1 at vanishing pump power. This value is comparable with the exciton lifetime measured by time-resolved photoluminescence. Fast and efficient single photon emitters with controlled spatial position and strong linear polarization are an important step towards high-speed on-chip quantum information management.

Nanowire Quantum Dot Surface Engineering for High Temperature Single Photon Emission

Disk-Shaped GaN Quantum Dots Embedded in AlN Nanowires for Room-Temperature Single-Photon Emitters Applicable to Quantum Information Technology

Position-controlled Telecom Single Photon Emitters Operating at Elevated Temperatures

InAs quantum dot in a needlelike tapered InP nanowire: a telecom band single photon source monolithically grown on silicon

Ultrafast Green Single Photon Emission from an InGaN Quantum Dot-in-a-GaN Nanowire at Room Temperature

Ordered arrays of InGaN/GaN dot-in-a-wire nanostructures as single photon emitters

Narrowband Diffuse Thermal Emitter Based on Surface Phonon Polaritons

Single photon emission in the telecom C-band from nanowire-based quantum dots

Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

Thermal stability of emission from single InGaAs/GaAs quantum dots at the telecom O-band

Single photon emission from ODT passivated near-surface GaAs quantum dots

Single-Photon Emission at Liquid Nitrogen Temperature from a Single InAs/GaAs Quantum Dot

Room Temperature Triggered Single Photon Emission from Self‐Assembled GaN/AlN Quantum Dot in Nanowire

Ultra-high thermal stability InAs/GaAs quantum dot lasers grown on on-axis Si (001) with a record-high continuous-wave operating temperature of 150 °C

Wafer-Scale Epitaxial Low Density InAs/GaAs Quantum Dot for Single Photon Emitter in Three-Inch Substrate

Single-mode Near-infrared Lasing in a GaAsSb/GaAs Nanowire Superlattice at Room Temperature

Single photon emitters in thin GaAsN nanowire tubes grown on Si

High emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-band

Wavelength-tunable InAsP Quantum Dots in InP Nanowires

Self-Catalyzed AlGaAs Nanowires and AlGaAs/GaAs Nanowire-Quantum Dots on Si Substrates