Abstract:Recently, the successful synthesis of biphenylene network (BPN) monolayers (A. V. Matetskiy et al. , Appl. Surf. Sci. , 2021, 539 , 148144) has resulted in significant progress in the study of carbon materials. Inspired by this material, the electronic structures and transport properties of graphene–BPN–graphene (G–BPN–G) nanojunction-based nanodevices are systematically studied using density functional theory and non-equilibrium Green's function methods. The results show that the I – V curves of two-dimensional (2D) and quasi-one-dimensional (Q1D) G–BPN–G devices exhibit intrinsic negative differential resistance (NDR) characteristics regardless of the electronic transport direction. But the electronic transport following the zigzag direction ( I z ) is faster than that along the armchair direction ( I a ) below a bias of 0.8 V, but when the bias is further increased, I a is greater than I z . For armchair-edged G–BPN–G nanoribbons, the metal or semi-conductive behaviors are dependent on their width and the kinds of passivated atoms on the edges. Specifically, the nanoribbons achieve the transition from semiconducting to metallic with an increase of the number of BPN in the heterogeneous structure by F-passivation and H-passivation. Moreover, O-passivated G–BPN–G nanoribbons always show metallic characteristics. Adjustable metal to semiconductor devices can be achieved by varying the combination of H- and O-passivated cells in Q1D G–BPN–G nanoribbon-based nanodevices. Overall, these interesting results demonstrate that these novel G–BPN–G devices have promising practical applications in future electronic nanodevices.

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Theoretical insight into the intrinsic electronic transport properties of graphene–biphenylene–graphene nanosheets and nanoribbons: a first-principles study

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Transport Properties of Graphene Nanoribbon-Based Molecular Devices.

Negative Differential Resistance Devices by Using N-doped Graphene Nanoribbons

Spontaneous Edge-Defect Formation And Defect-Induced Conductance Suppression In Graphene Nanoribbons

The Peculiar Transport Properties in P-N Junctions of Doped Graphene Nanoribbons

Spin-charge transport properties of a Z-shaped α-graphyne nanoribbon junction with different edge passivations

Negative Differential Resistance and Rectification Effects in Step-Like Graphene Nanoribbons

Negative Differential Resistance Behaviour in N-Doped Crossed Graphene Nanoribbons

Electronic Properties and Conductance Suppression of Defected and Doped Zigzag Graphene Nanoribbons

Transport Properties of Z-shaped Phosphorene Nanoribbon Devices

Negative Differential Resistance and Rectifying Performance Induced by Doped Graphene Nanoribbons P – N Device

Doping-induced Giant Rectification and Negative Differential Conductance (NDC) Behaviors in Zigzag Graphene Nano-Ribbon Junction

Spin-Resolved Electronic and Transport Properties of Graphyne-Based Nanojunctions with Different N-Substituting Positions.

Electronic transport through zigzag/armchair graphene nanoribbon heterojunctions.

Nonlinear Transport through ultra-narrow Zigzag Graphene Nanoribbons: non-equilibrium charge and bond currents

Improving Electronic Transport of Zigzag Graphene Nanoribbons by Ordered Doping of B or N Atoms

Parity Effects Induced by the Resonant Electronic States Coupling in Polyacetylene-Based Devices

First-principles study of electric field effect and spin-polarization transport properties of zigzag α-2 graphyne nanoribbons