Abstract:Electrochemical protonation provides facile ways to manipulate physical properties and explore unprecedented phases of solid‐state materials. Here it reveals that the interfacial proton accumulation plays a role in the protonation of SrCoO2.5 epitaxial films and that controlling the interfacial proton accumulation by adjusting proton injection duration is critical to promoting the protonation and proton evolution in SrCoO2.5 films. Electrochemical protonation provides ways to control physical properties and even explore unprecedented phases of solid‐state materials. While how proton accumulation changes materials' properties is investigated, how protonation of solids can be controlled and promoted remains an enigmatic puzzle. In the work reported here, the influence of electrochemical proton injection duration (tVg) is investigated on the protonation of SrCoO2.5 (SCO) films in electric‐field‐effect transistor structures with gate layers of the proton‐conducting electrolyte Nafion. The proton concentration accumulated in SCO films varies depending on the duration of the proton injection. When protons are injected in a relatively short tVg (≤ 600 s), the hydrogen concentration accumulated in SCO film increases with increasing tVg, reaching the maximum proton concentration of ≈1.9 per formula unit of SCO for the tVg = 600 s case. On the other hand, when tVg is longer than 900 s, the proton concentration decreases with tVg, implying the occurrence of counterreactions that extract protons from protonated SCO and oxidize the channel. These observations indicate that protons accumulated at the Nafion/SCO interface play a role in the protonation of SCO films and that suppressing the interfacial proton accumulation is the key to maximizing the proton concentration accumulated in SCO films.

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Hydrogen-Induced Topotactic Phase Transformations of Cobaltite Thin Films

Reversible manipulation of the magnetic state in SrRuO3 through electric-field controlled proton evolution

Strain-Induced Uphill Hydrogen Distribution in Perovskite Oxide Films.

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High-Conductive Protonated Layered Oxides from H<sub>2</sub>O Vapor-Annealed Brownmillerites

The crystallization dependent electron-proton synergistic doping for hydrogenation of WO3 film

Impact of Interfacial Proton Accumulation on Protonation in a Brownmillerite Oxide

Use of Interplay between A‐Site Non‐Stoichiometry and Hydroxide Doping to Deliver Novel Proton‐Conducting Perovskite Oxides

Tuning The Metal-Insulator Transition In Epitaxial Srvo3 Films By Uniaxial Strain

Reversible Band Structure Engineering in Semimetal SrIrO3 Films Using Atomic Hydrogen

Realizing Metastable Cobaltite Perovskite Via Proton-Induced Filling of Oxygen Vacancy Channels

Hydrogenation and Modulation of the Low Dimensional Inorganic Functional Materials

Unveiling Strong Ion-Electron-Lattice Coupling and Electronic Antidoping in Hydrogenated Perovskite Nickelate

Doping-Enabled Reconfigurable Strongly Correlated Phase in a Quasi-2D Perovskite

Aqueous solvent-regulated crystallization and interfacial modification in perovskite solar cells with enhanced stability and performance

Localized Control of Curie Temperature in Perovskite Oxide Film by Capping-Layer-Induced Octahedral Distortion.