Effect of Built-in Stresses on Defects of Graphene Based Gas Sensors

Kai-Ming Hu,Kun-Chao Bai,Han Yan,Bo Peng,Wen-Ming Zhang

DOI: https://doi.org/10.1109/transducers.2019.8808632

2019-01-01

Abstract:An interesting phenomenon, I D /I G intensity ratios between D mode and G mode increase around micro-wells, is observed in defective graphene sensors. A modified phenomenological model depicting the relation between I D /I G and the built-in stress is developed to reveal the physical mechanism of the above phenomenon. It is demonstrated that the initial defects in graphene gas sensors arising from fabrication processes can further propagate under the built-in tension resulting in increasing the defect density. The underlying mechanism is that the built-in stress provides the energy for the defect propagation of stretched graphene. The work could be helpful for applications of defective graphene-based devices.