Abstract:We report on the experimental study made on a successive prototype of High-Voltage CMOS (HV-CMOS) ATLASPix2 sensor for the tracking detector application, developed with 180 nm feature size. These sensors are to qualify mainly the peripheral data processing blocks (e.g. Command Decoder, Trigger Buffer, etc.). It is a smaller version of 24 X 36 pixelated sensor in comparison to the earlier generation of ATLASPix1 fabricated in both ams AG, Austria, and TSI Semiconductors, USA. While ams produced ATLASPix2 showed breakdown voltage 50 V in nonirradiated condition as it was seen on its predecessors ATLASpix1, TSI produced prototypes reported breakdown voltage greater than 100 V. The chosen wafer of MCz 20 <a class="link-external link-http" href="http://Ohm.cm" rel="external noopener nofollow">this http URL</a> P-type substrate resistivity can deplete a few tenths of um, where the process-driven surface damage can have a greater impact on device operating conditions before and after irradiation. In an aim to understand device intrinsic performance at the irradiated case, a dedicated neutron irradiation campaign has been made at JSI for different fluences. Characterizations have been performed at different temperatures after irradiation to analyze the leakage current and breakdown voltage before and after irradiation. TSI prototypes showed a breakdown voltage decrease 90 V due to impact ionization and enhanced effective doping concentration. Results demonstrated for the neutron-irradiated devices up to the fluence of 2 X 10^15 neq/cm2 can still safely be operated at a voltage high enough to allow for high efficiency. Accelerated Annealing steps also made on selective irradiated ATLASPix2 samples, equivalent to more than two years of room-temperature annealing (at 20 degC), and they showed the reassuring expected breakdown voltage increase and damage constant rate alpha^* (geometry dependent) decrease, driven by the beneficial annealing.

Performance of the ATLASPix1 Pixel Sensor Prototype in Ams Ah18 CMOS Technology for the ATLAS ITk Upgrade

Performance of CMOS pixel sensor prototypes in ams H35 and aH18 technology for the ATLAS ITk upgrade

Simulations and Performance Studies of a MAPS in 65 nm CMOS Imaging Technology

Electrical Characterization of 180 nm ATLASPix2 HV-CMOS Monolithic Prototypes for the High-Luminosity LHC

Depleted fully monolithic CMOS pixel detectors using a column based readout architecture for the ATLAS Inner Tracker upgrade

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Development of a Depleted Monolithic CMOS Sensor in a 150 nm CMOS Technology for the ATLAS Inner Tracker Upgrade

Study of Built-in Amplifier Performance on HV-CMOS Sensor for the ATLAS Phase-Ii Strip Tracker Upgrade

Testbeam Results of Irradiated Ams H18 HV-CMOS Pixel Sensor Prototypes

Investigation of HV/HR-CMOS Technology for the ATLAS Phase-II Strip Tracker Upgrade

Development of depleted monolithic pixel sensors in 150 nm CMOS technology for the ATLAS Inner Tracker upgrade

Subpixel Mapping and Test Beam Studies with a HV2FEI4v2 CMOS-Sensor-Hybrid Module for the ATLAS Inner Detector Upgrade

A Full Functional Monolithic Active Pixel Sensor Prototype for the CEPC Vertex Detector

Active Pixel Sensors in ams H18/H35 HV-CMOS Technology for the ATLAS HL-LHC Upgrade

Performance of the large scale HV-CMOS pixel sensor MuPix8

Results of the 2015 Testbeam of a 180 Nm AMS High-Voltage CMOS Sensor Prototype

Planar pixel sensors for the ATLAS upgrade: beam tests results

Towards a New Generation of Monolithic Active Pixel Sensors