Abstract:For deep-neural-network (DNN) processors [1-4], the product-sum (PS) operation predominates the computational workload for both convolution (CNVL) and fully-connect (FCNL) neural-network (NN) layers. This hinders the adoption of DNN processors to on the edge artificial-intelligence (AI) devices, which require low-power, low-cost and fast inference. Binary DNNs [5-6] are used to reduce computation and hardware costs for AI edge devices; however, a memory bottleneck still remains. In Fig. 31.5.1 conventional PE arrays exploit parallelized computation, but suffer from inefficient single-row SRAM access to weights and intermediate data. Computing-in-memory (CIM) improves efficiency by enabling parallel computing, reducing memory accesses, and suppressing intermediate data. Nonetheless, three critical challenges remain (Fig. 31.5.2), particularly for FCNL. We overcome these problems by co-optimizing the circuits and the system. Recently, researches have been focusing on XNOR based binary-DNN structures [6]. Although they achieve a slightly higher accuracy, than other binary structures, they require a significant hardware cost (i.e. 8T-12T SRAM) to implement a CIM system. To further reduce the hardware cost, by using 6T SRAM to implement a CIM system, we employ binary DNN with 0/1-neuron and ±1-weight that was proposed in [7]. We implemented a 65nm 4Kb algorithm-dependent CIM-SRAM unit-macro and in-house binary DNN structure (focusing on FCNL with a simplified PE array), for cost-aware DNN AI edge processors. This resulted in the first binary-based CIM-SRAM macro with the fastest (2.3ns) PS operation, and the highest energy-efficiency (55.8TOPS/W) among reported CIM macros [3-4].

A Dual-Split 6T SRAM-Based Computing-in-Memory Unit-Macro With Fully Parallel Product-Sum Operation for Binarized DNN Edge Processors

A 65nm 4kb Algorithm-Dependent Computing-in-Memory SRAM Unit-Macro with 2.3ns and 55.8TOPS/W Fully Parallel Product-Sum Operation for Binary DNN Edge Processors

A Twin-8T SRAM Computation-in-Memory Unit-Macro for Multibit CNN-Based AI Edge Processors

An XOR-10T SRAM computing-in-memory macro with current MAC operations and time-to-digital conversion for BNN edge processors

A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors

An Edram Based Computing-in-Memory Macro with Full-Valid-Storage and Channel-Wise-Parallelism for Depthwise Neural Network

TD-SRAM: Time-Domain-Based In-Memory Computing Macro for Binary Neural Networks

24.5 A Twin-8T SRAM Computation-In-Memory Macro for Multiple-Bit CNN-Based Machine Learning

A Dual-Wordline 6T SRAM Computing-In-Memory Macro Featuring Full Signed Multi-Bit Computation for Lightweight Networks

A 1–8b Reconfigurable Digital SRAM Compute-in-Memory Macro for Processing Neural Networks

A 128 Kb DAC-less 6T SRAM computing-in-memory macro with prioritized subranging ADC for AI edge applications

A Multiply-Less Approximate SRAM Compute-In-Memory Macro for Neural-Network Inference

An ADC-less RRAM-based Computing-in-Memory Macro with Binary CNN for Efficient Edge AI

An 8B-Precison 16-Kb FDSOI 8T SRAM CIM Macro Based on Time-Domain for Energy-Efficient Edge AI Devices

TAC-RAM: A 65nm 4kb SRAM Computing-in-Memory Design with 57.55 TOPS/W Supporting Multibit Matrix-Vector Multiplication for Binarized Neural Network.

SRAM-Based In-Memory Computing Macro Featuring Voltage-Mode Accumulator and Row-by-Row ADC for Processing Neural Networks

15.5 A 28nm 64Kb 6T SRAM Computing-in-Memory Macro with 8b MAC Operation for AI Edge Chips

An Energy-Efficient Floating-Point Compute SRAM with Pipelined In-Memory Bit-Parallel Exponent and Bitwise Mantissa Processing

A 578-TOPS/W RRAM-Based Binary Convolutional Neural Network Macro for Tiny AI Edge Devices

A 65 Nm 73 Kb SRAM-Based Computing-In-Memory Macro with Dynamic-Sparsity Controlling

A 28nm 32kb SRAM Computing-in-Memory Macro with Hierarchical Capacity Attenuator and Input Sparsity-Optimized ADC for 4b Mac Operation