High-Performance Free-Standing Flexible Photodetectors Based on Sulfur-Hyperdoped Ultrathin Silicon.

Xiaorong Jin,Yuqi Sun,Qiang Wu,Zixi Jia,Song Huang,Jianghong Yao,Hui Huang,Jingjun Xu
DOI: https://doi.org/10.1021/acsami.9b16667
IF: 9.5
2019-01-01
ACS Applied Materials & Interfaces
Abstract:Flexible photodetectors (PDs) prepared with silicon-based materials have received considerable attention for their use in a wide range of portable and wearable applications. In this study, we present the first free-standing flexible PD based on sulfur-hyperdoped ultrathin silicon, which was fabricated using a femtosecond laser in a SF6 atmosphere. It is found that the fabricated device exhibits excellent performance of broadband photoresponse from 400 to 1200 nm, with a peak responsivity of 63.79 A/W @ 870 nm at a low bias voltage of -2 V, corresponding to an external quantum efficiency reaching 9092%, which surpasses most values reported for silicon-based flexible PDs. In addition, the device shows a fast response speed (rise time τr = 68 μs) and stable detection performance with good mechanical flexibility. The high-performance PD described here suggests a promising way in flexible applications for sensors, imaging systems, and optical communication systems.
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