Abstract:In this article, we demonstrate normally-OFF p-GaN gate high electron mobility transistors (HEMTs) on Si with an ultrahigh breakdown voltage (<inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula>) and excellent saturation drain current. Benefiting from the optimized material growth of high-resistivity buffer, effective Al2O3 surface passivation with suppressed OFF-state leakage current, and proper management of the electric field on the p-GaN gate edge, the device with a gate–drain distance of <inline-formula> <tex-math notation="LaTeX">$18.5~\mu \text{m}$ </tex-math></inline-formula> exhibits a <inline-formula> <tex-math notation="LaTeX">${V}_{BR}$ </tex-math></inline-formula> of 1344 V at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$1~\mu \text{A}$ </tex-math></inline-formula>/mm with grounded substrates, the highest among all the reported normally-OFF GaN-on-Si transistors. Well-restored high-density 2-D electron gas and efficient gate modulation enable the device with a high <inline-formula> <tex-math notation="LaTeX">${I}_{DS,max}$ </tex-math></inline-formula> of 450 mA/mm and a low specific ON-resistance of 3.92 <inline-formula> <tex-math notation="LaTeX">$\text{m}\Omega \cdot $ </tex-math></inline-formula>cm2. Moreover, a large threshold voltage of 1.6 V (at <inline-formula> <tex-math notation="LaTeX">${I}_{D}$ </tex-math></inline-formula> of <inline-formula> <tex-math notation="LaTeX">$10~\mu \text{A}$ </tex-math></inline-formula>/mm) and a steep subthreshold slope of 66 mV/dec have been achieved, with negligible threshold voltage shift upon long-term forward gate stress at 150 °C. These results illustrate the great potential of p-GaN gate HEMTs on Si for beyond 600-V applications.

Surge Current Capability of GaN E-HEMTs in Reverse Conduction Mode

Investigation of Surge Current Capability of GaN E-HEMTs in the Third Quadrant: the Impact of P-GaN Contact

Investigation of Conductivity Modulation in Vertical GaN-on-GaN PiN Diode under High Current Density

Time/Current-Dependent Surge Current Capability of Fully-Vertical GaN-on-GaN PiN Diode with Conductivity Modulation

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

Surge Current Ruggedness in Vertical GaN-on-GaN PiN Diode: Role of Conductivity Modulation

1300 V Normally-OFF p-GaN Gate HEMTs on Si With High ON-State Drain Current

A Comparative Study on G-to-S ESD Robustness of the Ohmic-Gate and Schottky-Gate p-GaN HEMTs

Reverse Blocking P-Gan Gate AlGaN/GaN HEMTs with Hybrid P-Gan Ohmic Drain

Photon-Enhanced Conductivity Modulation and Surge Current Capability in Vertical GaN Power Rectifiers

Numerical Study of Novel GaN HEMTs With Integrated SBDs for Ultrahigh Reverse Conduction Capability

Reverse Blocking Enhancement‐Mode AlGaN/GaN HEMTs with Hybrid P‐gan Ohmic Drain on the Si Substrates

Progress of GaN-Based E-mode HEMTs

Highly Robust P-Gan Gate HEMT with Surge-Energy Ruggedness under Unclamped Inductive Switching and UV Pulse Laser Irradiation

Study of the Leakage Current Suppression for Hybrid-Schottky/ohmic Drain AlGaN/GaN HEMT

The ESD Behavior of Enhancement GaN HEMT Power Device with p-GaN Gate Structure

Gate Damage Mechanism of Schottky-Type P-Gan Gate HEMTs in Reverse Conduction Mode under Surge Current Stress

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

Degradation Behavior and Mechanism of GaN HEMTs with P-Type Gate in the Third Quadrant under Repetitive Surge Current Stress

Gate/Drain Coupled Barrier Lowering Effect and Negative Threshold Voltage Shift in Schottky-Type P-Gan Gate HEMT

Failure Behavior and Mechanism of P-Gan Gate AlGaN/GaN HEMTs in the Third Quadrant under Repetitive Surge Current Stress