Local Work Function Measurements of Thin Oxide Films on Metal Substrates

Zhichao Huang,Zhen Xu,Junyi Zhou,Haoran Chen,Wenhui Rong,Yuxuan Lin,Xiaojie Wen,Hao Zhu,Kai Wu

DOI: https://doi.org/10.1021/acs.jpcc.9b03253

2019-01-01

The Journal of Physical Chemistry C

Abstract:The electronic properties of thin oxide films supported on metal substrates have been the fundamental issues for supported model catalysts. Scanning tunneling microscopy (STM) can be employed to acquire the local information with measured tunneling current versus tip sample distance (I-z) curves. In addition to the dipole moments of the thin film, charge transfer between the oxide film and metal substrate can also be determined. Here, the local work functions of the CeO2/Pt(111) and Cu2O/Cu(111) model systems are measured using the I-z spectroscopic mapping. The experimental results show that, unlike those for metal substrates, the work function measurements of the supported thin oxide layers via this methodology are strongly dependent on the applied bias voltages. However, only at low biases can highly reliable work functions be acquired. The work function change between one monolayer CeO2 and bare Pt(111) substrate is -1.8 eV. Detailed analyses indicate that at higher bias voltages, the local work function measurement is severely perturbed by the electronic band structures of the thin oxide films. With the atomic resolution, local work functions of thin oxide layers supported by bulk metal substrates can be accurately determined by the STM I-z spectra, which is of great importance in explorations of surface electronic properties of thin oxide films.