Abstract:A defects‐rich SnSSe/C layered heterostructure is designed as anode for sodium‐ion batteries. Owing to the defects and homogeneously distributed S and Se atoms within SnSSe, the uniformly dispersed Sn0/Na2S/Na2Se intermediates are in‐situ formed during conversion reaction, which enhances the Na+ diffusion kinetic and boost the reversibility of reactions. As expected, it displays significant improvement in Na‐storage performance. 2D layered Sn‐based materials have attracted enormous attention due to their remarkable performance in sodium‐ion batteries. Nevertheless, this promising candidate involves a complex Na+‐storage process with multistep conversion‐alloying reactions, which induces the uneven dispersion of heterogeneous intermediate accompanied by severe agglomeration of metallic Sn0, inescapably resulting in poor reaction reversibility with sluggish rate capability and inferior cyclic lifespan. Herein, a delicately layered heterostructure SnSSe/C consisting of defect‐rich SnSSe and graphene is designed and successfully achieved via a facile hydrothermal process. The equal anionic substitution of Se in SnSSe crystal can trigger numerous defects, which can not only facilitate Na+ diffusion but also accelerate the nucleation process by inducing quantum‐dot‐level uniform distribution of heterogeneous intermediates, Na2Se/Na2S and Sn0. Concurrently, in situ formed uniform Na2Se/Na2S grain boundaries confined by this unique layered heterostructure may effectively suppress the agglomeration of metallic Sn0 nanograins and boost the reversibility of conversion‐alloying reaction. As a result, the SnSSe/C displays significant improvement in Na‐storage performance, in terms of remarkable rate capability and ultralong cycling lifespan. This work, focusing on controlling intermediate distribution, provides an effective strategy to boost reaction reversibility, which can be wildly employed in conversion‐based electrodes for energy storage regions.

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