Abstract:A domain wall model is proposed for relaxer ferroelectrics typified by Pb(Mg1/3Nb2/3)O-3 Under a large applied held or a large internal field, domain walls move over a long distance by overcoming localized barriers. This movement is responsible for the hysteresis loop and depolarization at temperatures below T-max. The activation volumes obtained by analyzing the coercive field dependence on temperature and frequency suggest that the barriers encountered by the domain walls are of the size of 1000 unit cells, and they increase as the relaxer becomes more like a normal ferroelectric. Since polarization is usually incomplete in relaxors even under a large polarizing field, depolarization readily occurs without the need of nucleating new domains. Domain walls are also responsible for permittivity peaks at high temperature under a weak field. However, without a strong held, domain walls are partially pinned by barriers and can only oscillate within the unpolarized regions between barriers. The mobility of domain walls can be modified by alloying to vary the spacing between ferroelectrically active ions and the internal held driving the walls. Furthermore, below a certain temperature, polarization domains become increasingly sharp and domain wall oscillation becomes increasingly difficult. This leads to the exhaustion of oscillation at an apparent freezing temperature below T-max. Overall, the domain wall model provides a simple framework that can be used to quantitatively analyze relaxer behavior over a broad range of compositions. Its theoretical basis is further justified by analogy to dislocation theory and interface mechanics in phase transformations.

Evaluation Of Reversible And Irreversible Domain Wall Motions In Relaxor Ferroelectrics: Influence Of Acceptor Ions

A Domain Wall Model for Relaxor Ferroelectrics

Relaxor Ferroelectric Characteristics And Temperature-Dependent Domain Structure In A (110)-Cut (Pbmg1/3nb2/3o3)(0.75)(Pbtio3)(0.25) Single Crystal

Reversible Domain-Wall-Motion-Induced Low-Hysteretic Piezoelectric Response in Ferroelectrics

Temperature-Dependent Reversible and Irreversible Processes in Nb-Doped Pbzro3 Relaxor Ferroelectric Thin Films

Domain Wall Motion in A and B Site Donor‐Doped Pb(Zr0.52Ti0.48)O3 Films

High temperature‐insensitive ferro‐/piezoelectric properties and nanodomain structures of Pb(In1/2Nb1/2)O3–PbZrO3–Pb(Mg1/3Nb2/3)O3–PbTiO3 relaxor single crystals

Contributions Of Domain Wall Motion To Complex Electromechanical Coefficients Of 0.62pb(Mg1/3nb2/3)O-3-0.38pbtio(3) Crystals

Dynamic Behavior of Polar Nanoregions in Re-Entrant Relaxor 0.6Bi(mg1/2ti1/2)o3-0.4Pbtio3

Influence of Li Doping on Domain Wall Motion in Pb(Zr0.52ti0.48)O-3 Films

Size determination and dynamic behavior of polar nanoregions in re-entrant relaxor 0.6Bi(Mg$_{1/2}$Ti$_{1/2}$)O$_3$-0.4PbTiO$_3$

Piezoresponse Force Microscopy Studies on the Domain Structures and Local Switching Behavior of Pb(In1/2Nb1/2)O3-Pb(Mg1/3Nb2/3)O3-PbTiO3 Single Crystals

The unexpected diffuse phase transition in relaxor-PbTiO3 ferroelectrics via acceptor modification

Contributions of domain wall motion to complex electromechanical coefficients of 0.62Pb(Mg(13)Nb(23))O(3)-0.38PbTiO(3) crystals.

Origin of Improvement in Mechanical Quality Factor in Acceptor-Doped Relaxor-Based Ferroelectric Single Crystals

Crystallographic dependence of internal bias in domain engineered Mn-doped relaxor-PbTiO3 single crystals

Domain Wall Pinning in Polycrystalline Perovskite La0.7sr0.3mno3

Evaluation Of Domain Wall Motion During Polymorphic Phase Transition In (K, Na)Nbo3-Based Piezoelectric Ceramics By Nonlinear Response Measurements

Effect of electric field intensity on domain kinetics of Pb(Mg1/3Nb2/3)O3–0.38PbTiO3 single crystal

Nonlinear Dielectric Response of Relaxor Ferroelectric (1 − x)Pb(Mg1/3Nb2/3)O3 − xPbTiO3 Epitaxial Thin Films

Dynamic characteristics of defect dipoles in Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal