Design of hybrid instruction Cache based on SRAM and STT-RAM

Xiaoyan HUANGFU,Xiaoya FAN,Xiaoping HUANG
DOI: https://doi.org/10.3778/j.issn.1002-8331.1308-0155
2015-01-01
Abstract:With the decrease of the grain size, the leakage power of traditional on-chip SRAM-based Cache increases expo-nentially, which hinders the increase of capacity of Cache on chip. As SRAM’s write speed is faster and STT-RAM is non-volatile, high density and very low leakage power, this paper designs a hybrid instruction Cache with SRAM and STT-RAM. The experimental results show that, compared with the SRAM-based instruction Cache, the hybrid instruction Cache increases capacity and significantly improves the hit rate without increasing the area.
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