Electro-optically Q-switching Performance of Diode-Pumped Ho:GdVO4 Laser at 2.05 Μm
Jiaze Wu,Youlun Ju,Xiaoming Duan,Renpeng Yan,Yu Ding,Dong Yan,Yuechu Wu,Tongyu Dai,Jiawei Fan
DOI: https://doi.org/10.1016/j.optlastec.2022.108845
IF: 4.939
2022-01-01
Optics & Laser Technology
Abstract:We proposed a Ho:GdVO4 laser operating at 2.05 mu m in-band directly pumped by the 1.94 mu m fiber-coupled laser diode, which electro-optically Q-switched by an LGS(La3Ga5SiO14) crystal. Adopting 1.0 at.%-doped Ho:GdVO4 crystal as the gain medium, a maximum output power of 6.5 W at 2047.9 nm with the absorbed pump power of 28 W was obtained in the continuous-wave mode, corresponding to a slope efficiency of 37.6 %. At a pulse repetition frequency of 1 kHz, the highest pulse energy of 3.25 mJ with a pulse width of 4.2 ns was achieved, corresponding to a peak power of 773.8 kW. In addition, the beam quality factor M2 was measured to be 1.9 at the maximum output level by the 90/10 knife-edge method. TEM00 propagation has been verified by a camera. To the best of our knowledge, this is the first demonstration of high peak power electro-optically Q-switched Ho: GdVO4 laser directly pumped by the 1.94 mu m laser diode.