Phototransistor Based on Single TaON Nanobelt and Its Photoresponse from Ultraviolet to Near-Infrared

Tao You-Rong,Chen Jin-Qiang,Wu Xing-Cai
DOI: https://doi.org/10.15541/jim20180584
IF: 1.292
2019-01-01
Journal of Inorganic Materials
Abstract:TaON nanobelts (NBs) were controllably synthesized by Ta2O5 NBs template-conversion method. The typical NBs have cross-sections of 40 nmx200 nm-400 nmx5600 nm, and lengths up to about 0.5 cm. A field effect transistor (FET) based on single TaON NB was fabricated on SiO2/Si substrate. The electronic mobility and on-off ratio of the nanobelts are 9.53 x10(-4) cm(2)/(V. s) and 3.4, respectively. The FET shows good photoresponses from 254 nm to 850 nm. Under irradiation of 405 nm light (42 mW/cm(2)), the responsivity is 249 mA/W at a bias of 5.0 M and the photoswitch current ratio is 11. Therefore, the phototransistor shows a good photodetectivity, and TaON NBs may become good candidates for fabricating optoelectronic devices. Additionally, Ta2O5@TaON composite NBs were also synthesized, and a FET based on the single NB was fabricated. Under irradiation of the same light, its photoresponse is weaker than TaON NB, but it is still a good optoelectronic material.
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