FEM modeling of magnetoelectric composites using line elements for thin film structure

Tianwen Huang,Hakeim Talleb,Aurélie Gensbittel,Loïc Becerra,Yunlin Zheng,Massimiliano Marangolo,Zhuoxiang Ren
DOI: https://doi.org/10.1177/1045389x241287578
IF: 2.7
2024-11-29
Journal of Intelligent Material Systems and Structures
Abstract:Journal of Intelligent Material Systems and Structures, Ahead of Print. This study conducts a comprehensive computational analysis of thin film deposited magnetoelectric (ME) composites, focusing on two distinct configurations: the self-biased Ni/(YXl)163° LiNbO3/Ni and the non-self-biased Ni/PZT-5H/Ni. This involves employing a multiphysics simulation tool based on the Finite Element Method (FEM). Our FEM modeling utilizes the line elements formulation, to facilitate the simulation of thin magnetostrictive Ni layers (10 μm thick), and integrates a magnetoelastic anhysteretic model to account for the nonlinear interactions within the magnetostrictive coupling. This FEM model is capable of predicting the anhysteretic nonlinear ME behavior and the ME performance under optimal working condition.
materials science, multidisciplinary
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