Abstract:Microbumps play a pivotal role in interlayer interconnections for advanced packaging. As chip integration density gradually increases, the pitch of microbumps continues to decrease. However, with continuous shrinkage in bump size, tin (Sn) solder spillage during high-temperature bonding has become a severe issue. Owing to the low yield strength of Sn, even a small applied pressure at elevated temperatures can induce excessive deformation. The excessive deformation of the Sn layer will not only deviate from the designed bump structure but also lead to a series of reliability concerns, such as sidewall depletion and joint bridging. Thinning the Sn layer thickness and employing reflow techniques are effective solutions to mitigate Sn spillage, but they are associated with excessive Kirkendall void formation and additional cleaning processes, respectively. In this work, an optimized bonding method for Sn-rich, fine-pitch microbump structures without a flux cleaning process is proposed. This technique combines an initial low-temperature solid-state diffusion (SSD) pre-bonding step and a subsequent rapid reflow process to complete the microbump interconnection. The influence of bonding temperature, bonding pressure, and formic acid environment on bonding quality is analyzed based on shear strength, cross-sectional images and electric tests. Ultimately, the optimized bonding parameters are determined to be pre-bonding at 200°C, 0.8 MPa for 1min, and reflow at 260°C for 1min. Reliable Cu-Sn bonding is achieved while retaining the original Sn profile as much as possible. The optimized bonding method is further validated on samples with different pitches and Sn layer thicknesses. This optimized bonding approach can facilitate accurate control of the bump profile and enable three-dimensional package integration.

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Electroplating of 3D Sn-rich Solder for MEMS Packaging Applications

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Optimization of Bonding Methods for Controlling Sn Spillage in Fine Pitch Microbump Applications

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