Tristate Resistive Switching in Heterogenous Van Der Waals Dielectric Structures

Kaichen Zhu,Xianhu Liang,Bin Yuan,Marco A. Villena,Chao Wen,Tao Wang,Shaochuan Chen,Mario Lanza,Fei Hui,Yuanyuan Shi

DOI: https://doi.org/10.1109/irps.2019.8720485

2019-01-01

Abstract:Two dimensional (2D) materials have been used in memristors to improve and stabilize resistive switching (RS) behavior; however, most reports used large device area $(\geq 10^{4} \mu \text{m}^{2})$ , in which currents in each resistive state may be driven by largely defective regions that are not applicable in smaller devices. Here we present the first fabrication of cross-point memristors with sizes of $5 \mu \text{m} \times 5 \mu \text{m}$ using multilayer heterogeneous van der Waals structure. We have constructed graphene/hexagonal boron nitride/graphene (G/h-BN/G) devices using Ti and Au electrodes. The devices can show two-state or tristate operation depending on the current limitation (CL) used. Similar memristors with larger size of $100 \mu \text{m} \times 100 \mu \text{m}$ do not show this behavior, indicating that miniaturization of 2D materials based memristors is key to achieve this performance.