Abstract:Silicon photonics is now widely accepted as a key technology in a variety of systems. But owing to material limitations, now it is challenging to greatly improve the performance after decades of development. Here, we show a high-performance broadband photodetector with significantly enhanced sensitivity and responsivity operating over a wide wavelength range of light from near-ultraviolet to near-infrared at low power consumption. The specially designed textured top ceiling electrode works effectively as an antireflection layer to greatly improve the absorption of near-infrared light, thereby overcoming the absorption limitation of near-infrared light. Instead of the conventional p-n junction and p-intrinsic-n junction, we introduce a similar to 15 nm thick alumina insulator layer between a p-type Si substrate and n-type ZnO nanowire (NW) arrays, which significantly enhances the charge carrier separation and collection efficiency. The photosensing responsivity and sensitivity are found to be nearly 1 order of magnitude higher than that of a reference device of p-Si/n-ZnO NW arrays, significantly higher than the commercial silicon photodiodes as well. The light-induced charge carriers flow across the appropriate thickness of insulator layer via the quantum mechanical Fowler-Nordheim tunneling mechanism. By virtue of the piezo-phototronic effect, the charge density at the interfaces can be tuned to alter the energy bands and the potential barrier distance for tunneling. Additionally, along with the use of incident light of different wavelengths, the influence of the insulator layer on the transport of electrons and holes separately is further investigated. The demonstrated concepts and study would lead to sensitivity improvement, quality enhancement of data transfer, decrease of power consumption, and cost reduction of silicon photonics.

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Highly Sensitive and Broadband Organic Photodetectors with Fast Speed Gain and Large Linear Dynamic Range at Low Forward Bias

Design of Low Noise and High Gain Broadband Photodetector

Addressing gain-bandwidth trade-off by a monolithically integrated photovoltaic transistor

Filterless and High-Speed InP Near-Infrared Photodetector With an Ultra-Small Full-Width at Half Maximum

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A Colloidal-Quantum-Dot Infrared Photodiode with High Photoconductive Gain.

Dramatically Enhanced Broadband Photodetection by Dual Inversion Layers and Fowler-Nordheim Tunneling

Design and fabrication of a high-performance evanescently coupled waveguide photodetector

Vertically Integrated Optical Sensor with Photoconductive Gain > 10 and Fill Factor > 70%

Hybrid MOS-PN photodiode with positive feedback for pulse-modulation imaging