Abstract:Topological materials, which feature robust surface and/or edge states, have now been a research focus in condensed matter physics. They represent a new class of materials exhibiting nontrivial topological phases, and provide a platform for exploring exotic transport phenomena, such as the quantum anomalous Hall effect and the quantum spin Hall effect. Recently, magnetic topological materials have attracted considerable interests due to the possibility to study the interplay between topological and magnetic orders. In particular, the quantum anomalous Hall and axion insulator phases can be realized in topological insulators with magnetic order. MnBi2Te4, as the first intrinsic antiferromagnetic topological insulator discovered, allows the examination of existing theoretical predictions; it has been extensively studied, and many new discoveries have been made. Here we review the progress made on MnBi2Te4 from both experimental and theoretical aspects. The bulk crystal and magnetic structures are surveyed first, followed by a review of theoretical calculations and experimental probes on the band structure and surface states, and a discussion of various exotic phases that can be realized in MnBi2Te4. The properties of MnBi2Te4 thin films and the corresponding transport studies are then reviewed, with an emphasis on the edge state transport. Possible future research directions in this field are also discussed.

Transport Properties of Thin Flakes of the Antiferromagnetic Topological Insulator MnBi2Te4

Magnetic and Transport Properties in the Magnetic Topological Insulators MnBi2Te4(Bi…

Progress on the Antiferromagnetic Topological Insulator MnBi2Te4.

Progress on the antiferromagnetic topological insulator MnBi<sub>2</sub>Te<sub>4</sub>

Quantum Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi 2 Te 4

Magnetic-field-induced Quantized Anomalous Hall Effect in Intrinsic Magnetic Topological Insulator MnBi_2Te_4

Magnetic and electrical transport study of the antiferromagnetic topological insulator Sn-doped MnBi 2 Te 4

Magnetic-field-induced quantized anomalous Hall effect in intrinsic magnetic topological insulator MnBi$_2$Te$_4$

Possible Bipolar Effect Inducing Anomalous Transport Behavior in the Magnetic Topological Insulator Mn( Bi1−xSbx)2

Layer-Dependent Magnetic Structure and Anomalous Hall Effect in the Magnetic Topological Insulator MnBi4Te7.

Charge Carrier Mediation and Ferromagnetism Induced in MnBi6Te10 Magnetic Topological Insulators by Antimony Doping

Antiferromagnetic Topological Insulator MnBi2Te4: Synthesis and Magnetic Properties.

From Negative to Positive Magnetoresistance in the Intrinsic Magnetic Topological Insulator MnBi2Te4

Topological Electronic Structure and Its Temperature Evolution in Antiferromagnetic Topological Insulator MnBi_{2}Te_{4}

Coexistence of Ferromagnetism and Topology by Charge Carrier Engineering in the Intrinsic Magnetic Topological Insulator MnBi4Te7

Unconventional anomalous Hall effect in magnetic topological insulator MnBi 4 Te 7 device

Unconventional Anomalous Hall Effect in Magnetic Topological Insulator MnBi4Te7 Device

Even–Odd Layer-Dependent Anomalous Hall Effect in Topological Magnet MnBi 2 Te 4 Thin Films

Mapping Dirac fermions in the intrinsic antiferromagnetic topological insulators ( Mn Bi 2 Te 4 ) ( Bi 2 Te 3 ) n ( n = 0 , 1 )

Intrinsic magnetic topological insulator phases in the Sb doped MnBi2Te4 bulks and thin flakes

Electronic States and Magnetic Response of MnBi2Te4 by Scanning Tunneling Microscopy and Spectroscopy