Bipolar Conduction and Giant Positive Magnetoresistance in Doped Metallic Titanium Oxide Heterostructures
Ke Huang,Tao Wang,Mengjia Jin,Liang Wu,Junyao Floria Wang,Shengyao Li,Dong‐Chen Qi,Shuying Cheng,Yangyang Li,Jingsheng Chen,Xiaozhong He,Changjian Li,Stephen J. Pennycook,Xiao Renshaw Wang
DOI: https://doi.org/10.1002/admi.202002147
IF: 5.4
2021-02-03
Advanced Materials Interfaces
Abstract:<p>Empowering conventional materials with unexpected magnetoelectric properties is appealing to the multi‐functionalization of existing devices and the exploration of future electronics. Recently, owing to its unique effect in modulating a matter's properties, ultra‐small dopants, for example, H, D, and Li, attract enormous attention in creating emergent functionalities, such as superconductivity, and metal–insulator transition. Here, an observation of bipolar conduction accompanied by a giant positive magnetoresistance in D‐doped metallic Ti oxide (TiO<i><sub>x</sub></i>D<i><sub>y</sub></i>) films is reported. To overcome the challenges in intercalating the D into a crystalline oxide, a series of TiO<sub>x</sub>D<sub>y</sub> is formed by sequentially doping Ti with D and surface/interface oxidation. Intriguingly, while the electron mobility of the TiO<i><sub>x</sub></i>D<i><sub>y</sub></i> increases by an order of magnitude larger after doping, the emergent holes also exhibit high mobility. Moreover, the bipolar conduction induces a giant magnetoresistance up to 900% at 6 T, which is ≈6 times higher than its conventional phase. This study paves a way to empower conventional materials in existing electronics and induce novel electronic phases.</p>
materials science, multidisciplinary,chemistry