Preparation and Thermoelectric Property of N-Type SnS

Huang Zhi-Cheng,Yao,Pei Jun,Dong Jin-Feng,Zhang Bo-Ping,Li Jing-Feng,Shang Peng-Peng
DOI: https://doi.org/10.15541/jim20180293
IF: 1.292
2019-01-01
Journal of Inorganic Materials
Abstract:SnS composed of low toxicity, low-cost and earth-abundant elements, has extensive attention in the field of thermoelectric research. The n-type SnS1-xClx (x=0, 0.02, 0.03, 0.04, 0.05, 0.06) polycrystalline bulk thermoelectric samples were prepared by mechanical alloying (MA) combined with Spark Plasma Sintering (SPS). Effect of Cl- amounts on the phase structure, microstructure and thermoelectric transport properties were systematically studied. Results show that introduction of Cl- enhances electron concentration which makes intrinsic p-type SnS change to n-type. With the amount of Cl- increasing, the Hall carrier concentration of n-type SnS semiconductor increases from 6.31x10(14) cm(-3) (x=0.03) to 7.27x10(15) cm(-3) (x=0.06) at room temperature. The maximum electrical conductivity of 408 S.m(-1) and the relatively high Seebeck coefficient of -553 mu V.K-1 are obtained at 823 K for x=0.05 sample, which produces the maximum power factor of 1.2 mu W.cm(-1).K-2. Addition of Cl- can introduce point defects to scatter phonons, which makes the lattice thermal conductivity reduce from 0.67 W.m(-1).K-1 (x=0) to 0.5 W.m(-1).K-1 (x=0.02). The highest ZT similar to 0.17 is obtained at 823 K for x=0.04 sample, which is 70% higher than that (ZT similar to 0.1) of the pristine SnS.
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