Abstract:As a critical command center in organisms, the brain can execute multiple intelligent interactions through neural networks, including memory, learning and cognition. Recently, memristive-based neuromorphic devices have been widely developed as promising technologies to build artificial synapses and neurons for neural networks. However, multiple information interactions in artificial intelligence devices potentially pose threats to information security. Herein, a transient form of heterogeneous memristor with a stacked structure of Ag/MgO/SiN x /W is proposed, in which both the reconfigurable resistive switching behavior and volatile threshold switching characteristics could be realized by adjusting the thickness of the SiN x layer. The underlying resistive switching mechanism of the device was elucidated in terms of filamentary and interfacial effects. Representative neural functions, including short-term plasticity (STP), the transformation from STP to long-term plasticity, and integrate-and-fire neuron functions, have been successfully emulated in memristive devices. Moreover, the dissolution kinetics associated with underlying transient behaviors were explored, and the water-assisted transfer printing technique was exploited to build transient neuromorphic device arrays on the water-dissolvable poly(vinyl alcohol) substrate, which were able to formless disappear in deionized water after 10-s dissolution at room temperature. This transient form of memristive-based neuromorphic device provides an important step toward information security reinforcement for artificial neural network applications.

Physically Transient Memristive Synapse with Short-Term Plasticity Based on Magnesium Oxide

Physically Transient Memristor Synapse Based on Embedding Magnesium Nanolayer in Oxide for Security Neuromorphic Electronics

Fully Physically Transient Volatile Memristor Based on Mg/Magnesium Oxide for Biodegradable Neuromorphic Electronics

Physically Transient Artificial Neuron Based on Mg/Magnesium Oxide Threshold Switching Memristor

A Bio-Inspired Physically Transient/biodegradable Synapse for Security Neuromorphic Computing Based on Memristors

Transient Form of Polyvinyl Alcohol-Based Devices with Configurable Resistive Switching Behavior for Security Neuromorphic Computing

Physically Transient Optic-Neural Synapse for Secure In-Sensor Computing

Solution-Processed Physically Transient Resistive Memory Based on Magnesium Oxide

A Transient and Biocompatible Biomemristor Integrated with NonVolatile Memory and Artificial Synapse

A Physically Transient Self-Rectifying and Analogue Switching Memristor Synapse

Security enhancement of artificial neural network using physically transient form of heterogeneous memristors with tunable resistive switching behaviors

Physically Transient Resistive Switching Memory with Material Implication Operation

Solution-Processed Synaptic Memristors Based on Halide Perovskite Nanocrystals

Emulating Dynamic Synaptic Plasticity over Broad Timescales with Memristive Device

Truly Concomitant and Independently Expressed Short‐ and Long‐Term Plasticity in a Bi2O2Se‐Based Three‐Terminal Memristor

Mediating Short-Term Plasticity in an Artificial Memristive Synapse by the Orientation of Silica Mesopores

Solution-processed Inorganic Δ-Phase CsPbI3 Electronic Synapses with Short- and Long-Term Plasticity in a Crossbar Array Structure

Truly concomitant and independently expressed short- and long-term plasticity in Bi2O2Se-based three-terminal memristor

Mimicking Synaptic Plasticity and Neural Network Using Memtranstors

Self-doping memristors with equivalently synaptic ion dynamics for neuromorphic computing.

Artificial Synapses Based on an Optical/Electrical Biomemristor