In Situ Fabrication of PdSe 2 /GaN Schottky Junction for Polarization-Sensitive Ultraviolet Photodetection with High Dichroic Ratio
Di Wu,Mengmeng Xu,Longhui Zeng,Zhifeng Shi,Yongzhi Tian,Xin Jian Li,Chong-Xin Shan,Jiansheng Jie
DOI: https://doi.org/10.1021/acsnano.1c10181
IF: 17.1
2022-03-24
ACS Nano
Abstract:Polarization-sensitive ultraviolet (UV) photodetection is of great technological importance for both civilian and military applications. Two-dimensional (2D) group-10 transition-metal dichalcogenides (TMDs), especially palladium diselenide (PdSe2), are promising candidates for polarized photodetection due to their low-symmetric crystal structure. However, the lack of an efficient heterostructure severely restricts their applications in UV-polarized photodetection. Here, we develop a PdSe2/GaN Schottky junction by in situ van der Waals growth for highly polarization-sensitive UV photodetection. Owing to the high-quality junction, the device exhibits an appealing UV detection performance in terms of a large responsivity of 249.9 mA/W, a high specific detectivity, and a fast response speed. More importantly, thanks to the puckered structure of the PdSe2 layer, the device is highly sensitive to polarized UV light with a large dichroic ratio up to 4.5, which is among the highest for 2D TMD material-based UV polarization-sensitive photodetectors. These findings further enable the demonstration of the outstanding polarized UV imaging capability of the Schottky junction, as well as its utility as an optical receiver for secure UV optical communication. Our work offers a strategy to fabricate the PdSe2-based heterostructure for high-performance polarization-sensitive UV photodetection.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acsnano.1c10181.Raman spectra and the intensity of the Ag3 Raman peak of the PdSe2 film, photographs of the 2D PdSe2 layer, XRD patterns of the 2D PdSe2 layer, Pd 3d core level spectra of the 2D PdSe2 layer, thickness homogeneity of a wafer-scale PdSe2 layer, photograph of the real PdSe2/GaN Schottky junction device, I–V curves of Au-PdSe2-Au and Ni/Au-GaN-Ni/Au, absorption spectra of the GaN film and PdSe2/GaN hybrid structure, time-resolved photovoltaic photoresponse of the device, ISC and VOC of the device, current noise power spectrum of the PdSe2/GaN Schottky junction device, relative balance as a function of switching frequency, response speeds of the photodetector, normalized photoresponse of the photodetector, single photoresponse for estimating response speed, normalized photocurrent of the PdSe2 film, photograph of a 4 × 4 PdSe2/GaN Schottky junction device array, reproducibility of the PdSe2/GaN Schottky junction device, stability of the PdSe2/GaN Schottky junction photodetector, polarization angle-dependent absorption and reflection spectra of the PdSe2/GaN Schottky junction, polar plots of the absorbance and reflectance (PDF)This article has not yet been cited by other publications.
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology