Enhanced Photoelectrochemical Performance of Zn2SnO4N by Interstitial N Induced the Build-in Polarization Electric Field

Min Wang,Guoqiang Tan,Dan Zhang,Bin Li,Long Lv,Ying Wang,Huijun Ren,XinLei Zhang,Ao Xia,Yun Liu
DOI: https://doi.org/10.1016/j.jallcom.2019.02.033
IF: 6.2
2019-01-01
Journal of Alloys and Compounds
Abstract:Highly active Zn2SnO4N photocatalysts were successfully prepared by the one-step microwave-assisted solvothermal method. N heteroatoms were introduced into Zn2SnO4 by occupying the interstitial sites, inducing the formation of the build-in polarization electric field and the impurity level which was advantageous to promote the separation and the migration of photoinduced electron-hole pairs. As a result, the as-prepared Zn2SnO4N exhibited improved the photoelectrochemical properties and the photodegradation rate of RhB over Zn2SnO4N had been demonstrated to increase 3.3 times compared to that of pure Zn2SnO4. Under the effect of the built-in electric field, the impurity level served as a springboard for electron transition rather than a recombination center, which caused the enhancing photocatalytic performance. The finding may provide a new insight into understanding the mechanism of doping modification.
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