Large current nanosecond pulse generating circuit for driving semiconductor laser diode

Shaocong Wen,Mao Wang,Jie Xie,Dongmin Wu
DOI: https://doi.org/10.1002/mop.31654
IF: 1.311
2019-01-01
Microwave and Optical Technology Letters
Abstract:The semiconductor laser diode SPL LL90_3, which integrates the RC charge-discharge circuit and a MOSFET switching device, is usually used for pulsing laser in the light detection and ranging system with a rated peak power of 70 W at 30 ns pulse-width. To further increase the peak power and reduce the pulse width and rising edge, a driving circuit with an avalanche transistor used as a pre-switching device is proposed. A trigger pulse with about 10 ns'-pulse-width is obtained to drive the laser diode. At the same time, the pulsing laser's peak power can reach 141 W at the testing repetition rate of 55 kHz.
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