Transfer Printing of Metal Electrodes for High Performance InSe Photodetectors

Ke Jin,Taishen Li,Hongbing Cai,Mingling Li,Nan Pan,Xiaoping Wang
DOI: https://doi.org/10.1016/j.optcom.2018.11.076
IF: 2.4
2019-01-01
Optics Communications
Abstract:Electrodes play a crucial role in the performance of the device. The common method to prepare electrodes on two-dimensional materials, such as electron beam lithography (EBL), often suffers from the contact resistance because of the resist residue. The transfer printing method (TPM) can partly solve this problem and simultaneously preserve the high-precision of the EBL method to fabricate electrodes patterns. In this work, we report the fabrication of clean electrodes on few layers InSe flake by the TPM to construct high performance photodetector. The device shows high photoresponse with the photoresponsivity of 6.95×105A/W, the detectivity of 1.7×1012Jones and the quantum efficiency of 2.1×106, demonstrating the great application of the TPM for the electrodes preparation in two-dimensional material devices.
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