Origin and Mechanism Analysis of Asymmetric Current Fluctuations in Single-Molecule Junctions

Chunhui Gu,Hao Wang,Hantao Sun,Jianhui Liao,Shimin Hou,Xuefeng Guo
DOI: https://doi.org/10.1039/c8ra08508k
IF: 4.036
2018-01-01
RSC Advances
Abstract:The measurements of molecular electronic devices usually suffer from serious noise. Although noise hampers the operation of electric circuits in most cases, current fluctuations in single-molecule junctions are essentially related to their intrinsic quantum effects in the process of electron transport. Noise analysis can reveal and understand these processes from the behavior of current fluctuations. Here, in this study we observe and analyze the faint asymmetric current distribution in single-molecule junctions, in which the asymmetric intensity is highly related to the applied biases. The exploration of high-order moments within bias and temperature dependent measurements, in combination with model Hamiltonian calculations, statistically prove that the asymmetric current distribution originates from the inelastic electron tunneling process. Such results demonstrate a potential noise analysis method based on the fine structures of the current distribution rather than the noise power, which has obvious advantages in the investigation of the inelastic electron tunneling process in single-molecule junctions.
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