Catalyst-free Growth of a Zn2GeO4 Nanowire Network for High-Performance Transfer-Free Solar-Blind Deep UV Detection

Yiming Zhao,Shuanglong Feng,Haitao Jiang,Sai Ma,Zhiyong Tao,Wenqiang Lu,Yaxian Fan
DOI: https://doi.org/10.1016/j.physe.2018.11.015
2019-01-01
Abstract:Solar-blind deep-ultraviolet (DUV) photodetectors have attracted wide attention because of their extensive military and civil applications. The ternary oxide Zn2GeO4 is an ideal material with a wide bandgap (E-g = 4.69 eV). In this work, DUV photodetectors based on a ternary Zn2GeO4 nanowire (NW) network were fabricated on SiO2/Si substrates. Reactive ion etching of the SiO2/Si wafer was used to grow the NW network to avoid contamination of the Au catalyst during synthesis of the Zn2GeO4 NW network via high-temperature chemical vapor deposition. Photodetectors based the Zn2GeO4 NW revealed fast response and recovery times, which is attributed to the unique cross-junction barrier-dominated conductance of the NW network. Results showed that the ternary oxide-based NW network is an ideal building block for nanoscale solar-blind photo-detectors with superior performance.
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