Interfacial Electronic Structures of MoOx/mixed Perovskite Photodetector

Lin Li,Chunhua Wang,Can Wang,Sichao Tong,Yuan Zhao,Huayan Xia,Jiao Shi,Jianqiang Shen,Haipeng Xie,Xiaoliang Liu,Dongmei Niu,Junliang Yang,Han Huang,Si Xiao,Jun He,Yongli Gao
DOI: https://doi.org/10.1016/j.orgel.2018.11.009
IF: 3.868
2019-01-01
Organic Electronics
Abstract:A systematical investigation on the electronic structures of the interface of MoOx/mixed organic cations perovskite (FA(0.4)MA(0.6)PbI(3)) was carried out with ultraviolet photoemission spectroscopy (UPS), X-ray photoemission spectroscopy (XPS), photoluminescence (PL) and absorption spectra (ABS). It is found that the pristine FA(0.4)MA(0.6)PbI(3) film behaves as heavy n-type semiconductor. Some weakly chemical interactions are detected at the interface of MoOx/FA(0.4)MA(0.6)PbI(3) from the evolution of the ratio of Mo5+/Mo6+ and attenuation of I. The results of the energy level alignment indicate a total band bending-up (shift to low binding energy) of 0.68 eV and 0.2 eV in the FA(0.4)MA(0.6)PbI(3) and the MoOx layer, respectively, with the deposition of up to 128 angstrom MoOx. The built-in field in FA(0.4)MA(0.6)PbI(3) induces a strong accumulation of photogenerated holes at the interface region, which facilitates the growth of a conducting channel when the interface is used for photodetectors. A low applied voltage similar to 0.8 V can overcome the interfacial potential barrier and generate continuous photocurrents based on this conducting channel in the MoOx/FA(0.4)MA(0.6)PbI(3)-based photodetectors. The analyses are supported by the Au/MoOx(5 nm)/FA(0.4)MA(0.6)PbI(3) prototype photodetector, which obtains high performances with a detectivity of up to 2.34 x 10(12) Jones and a responsivity of 0.356 AW(-1), 2 times higher than the Au/FA(0.4)MA(0.6)PbI(3) photodetector. Meanwhile the optimized photodector has high repeatability and stability.
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