Terahertz emission characterization of silicon based ferromagnetic heterostructures
Hong-Yang Cheng,Qian-Ru Ma,Hao-Ran Xu,Hui-Ping Zhang,Zuan-Ming Jin,Wei He,Yan Peng,Terahertz Spectrum and Imaging Cooperative Innovation Center, Engineering Research Center of Optical Instrument and System (Ministry of Education), Shanghai Key Lab of Modern Optical System, Terahertz Technology Innovation Research Institute, University of Shanghai for Science and Technology, Shanghai 200093, China,Shanghai Institute of Intelligent Science and Technology, Tongji University, Shanghai 200092, China,State Key Laboratory of Magnetism, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
DOI: https://doi.org/10.7498/aps.73.20240703
IF: 0.906
2024-08-21
Acta Physica Sinica
Abstract:Author(s): Cheng Hong-Yang, Ma Qian-Ru, Xu Hao-Ran, Zhang Hui-Ping, Jin Zuan-Ming, He Wei, Peng Yan Terahertz spectroscopy and imaging have many applications, so the generation of broadband terahertz radiation is very important, but now it faces some challenges. Opto-spintronic terahertz emitters, composed of nanometer-thin magnetic multilayer, can produce high-quality broad-band terahertz pulses. Integration of opto-spintronic terahertz emitters onto the silicon wafers is the first step towards their usage in modern photonic devices. In this work, Ta/CoFeB/Ir heterostructures are deposited on thermally oxidized silicon wafers by dc magnetron sputtering. Under the illumination of a femtosecond laser pulse on the Ta/CoFeB/Ir trilayer heterostructure grown on silicon substrate, a spin current can be generated in the ferromagnetic layer due to the ultrafast demagnetization. The spin current is transported and injected into the neighboring non-magnetic metal layers of Ta and Ir. Consequently, the spin current can be converted into the charge current due to the strong spin-orbit coupling. The sub-picosecond transient charge current gives rise to the terahertz radiation that enters into the free space. The terahertz electric field is fully inverted when the magnetization is reversed, which indicates a strong connection between THz radiation and spin order of the heterostructure. The THz radiation from Ta/CoFeB/Ir heterostructure covers the 0.1–2.5 THz frequency range with a maximum value of about 0.64 THz. We also investigate the dependence of THz peak-to-peak value on the pump fluence. The THz emission is found to be saturated at a pump fluence of ~0.73 mJ/cm<sup<2< (0.59±0.12)="" (~1.34="" 1.1="" 2.4="" about="" according="" and="" antiferromagnet="" are="" at="" attributed="" be="" by="" changing="" cofeb="" consistent="" coupling="" current="" demonstrate="" dependence="" different="" emission="" existence="" experimental="" extracted="" for="" frequencies="" from="" furthermore,="" ghz="" heavy="" heterostructure="" heterostructure,="" in="" ir="" ir.="" irmn="" is="" layer,="" layer.="" layers="" length="" may="" measurement="" metal="" nm="" nm).="" nm,="" observation="" of="" optimize="" optimized="" our="" p="" propagation="" regimes.="" respectively.<="" results="" shorter="" spin="" spin-orbit="" strong="" sup Acta Physica Sinica. 2024 73(16): 167801. Published 2024-08-20</sup<2<>
physics, multidisciplinary