Effect Of Ni Barrier Layer Thickness On Imcs Evolution In Phi 5 Mu M Cu/Ni/Sn Pillar Bumps

Kai Chen,Huiqin Ling,Fayao Guo,Ming Li,Wenqi Zhang,Liqiang Cao

DOI: https://doi.org/10.1109/icept.2018.8480711

2018-01-01

Abstract:Uniform 5 mu m diameter Cu/Ni/Sn micro-bump array has been fabricated by multilayer electrodeposition, and the effect of Ni barrier thickness (0 mu m, 0.42 mu m, 0.67 mu m, 1.12 mu m) on microstructure evolution and growth behaviors of Intermetallic Compounds (IMCs) have been studied through SEM and EDS. It has been found that the thicker the Ni layer, the slower the rate of IMCs growth. The diffusion coefficient of Cu/Ni/Sn system with 0 mu m, 0.42 mu m, 0.67 mu m, 1.12 mu m Ni is calculated to be 7.46x10(-17)m(2)s(-1), 5.51x10(-17)m(2)s(-1), and 1.71x10(-17)m(2)s(-1) for total IMCs, respectively. In the Sn/0.42 mu m Ni/Cu system, (Cu,Ni)(6)Sn-5 is formed firstly. After the consumption of Ni layer, the growth behavior of Cu6Sn5 and Cu3Sn is similar to that of the Sn/Cu system; In the Sn/1.12 mu m Ni/Cu system, 1.12 mu m Ni barrier layer can form Ni3Sn4 preventing Cu atoms from diffusing into Sn phase and there is almost no formation of (Cu,Ni)(6)Sn-5.