Ultrahigh energy density due to self-growing double dielectric layers at a titanium/sol–gel-derived amorphous aluminium oxide interface

Zhen Su,Manwen Yao,Xi Yao

DOI: https://doi.org/10.1039/c8tc02524j

IF: 6.4

2018-01-01

Journal of Materials Chemistry C

Abstract:Pursuing high-energy-density dielectric materials is desirable for the growing demands of energy storage for dielectric capacitors in modern electric power systems. Herein, a simple titanium/sol-gel-derived amorphous aluminium oxide (Ti/AmAO) film is firstly presented. The structural evolution was that double dielectric layers of a compact TiO2 layer and an Al2O3/TiOx layer self-grow simultaneously at a Ti/AmAO interface under a high electric field. The high resistivities of the TiO2 layer (an order of magnitude of 10(9) Omega cm) and the Al2O3/TiOx layer (an order of magnitude of 10(11) Omega cm) and the improved AmAO film contribute to improving the breakdown strength, and the high dielectric constant of the TiO2 layer (up to 28.1) serves to yield a high dielectric constant. Therefore, the interfacial evolution endows the film with a high breakdown strength of up to 548 MV m(-1) and a high dielectric constant of 15.9. An energy density as high as 20.9 J cm(-3) at 545 MV m(-1) is achieved. Meanwhile, a growth model for the compact layers is proposed to comprehensively understand the interfacial behaviour. This work extends a novel approach of introducing interfacial evolution to improve the energy storage capacity of a dielectric capacitor.