Abstract:A van der Waals material, MoTe2 with a monoclinic 1T' crystal structure is a candidate for 3D second-order topological insulators (SOTIs) hosting gapless hinge states and insulating surface states. However, due to the temperature-induced structural phase transition, the monoclinic 1T' structure of MoTe2 is transformed into the orthorhombic Td structure as the temperature is lowered, which hinders the experimental verification and electronic applications of the predicted SOTI state at low temperatures. Here, systematic Raman spectroscopy studies of the exfoliated MoTe2 thin flakes with variable thicknesses at different temperatures, are presented. As a spectroscopic signature of the orthorhombic Td structure of MoTe2 , the out-of-plane vibration mode D at ≈ 125 cm-1 is always visible below a certain temperature in the multilayer flakes thicker than ≈ 27.7 nm, but vanishes in the temperature range from 80 to 320 K when the flake thickness becomes lower than ≈ 19.5 nm. The absence of the out-of-plane vibration mode D in the Raman spectra here demonstrates not only the disappearance of the monoclinic-to-orthorhombic phase transition but also the persistence of the monoclinic 1T' structure in the MoTe2 thin flakes thinner than ≈ 19.5 nm at low temperatures down to 80 K, which may be caused by the high enough density of the holes introduced during the gold-enhanced exfoliation process and exposure to air. The MoTe2 thin flakes with the low-temperature monoclinic 1T' structure provide a material platform for realizing SOTI states in van der Waals materials at low temperatures, which paves the way for developing a new generation of electronic devices based on SOTIs.

Inversion Symmetry Broken 2D 3R‐mote2

Single-layer Mo5Te8 ― A New Polymorph of Layered Transition-Metal Chalcogenide

Phase-Controllable Chemical Vapor Deposition Synthesis of Atomically Thin MoTe2

Millimeter-Scale Single-Crystalline Semiconducting MoTe2 Via Solid-to-Solid Phase Transformation.

Absorption Dichroism of Monolayer 1T′-Mote 2 in Visible Range

Raman Signatures of Inversion Symmetry Breaking and Structural Phase Transition in Type-Ii Weyl Semimetal MoTe2.

Atomistic Observation of the Local Phase Transition in MoTe2 for Application in Homojunction Photodetectors.

In situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2

Controllable 2H-to-1t' Phase Transition in Few-Layer MoTe2.

Phase Stability and Raman Vibration of the Molybdenum Ditelluride (mote2) Monolayer.

Electric field induced semiconductor-to-metal phase transition in vertical MoTe2 and Mo1-xWxTe2 devices

Tellurization Velocity-Dependent Metallic-Semiconducting-Metallic Phase Evolution in Chemical Vapor Deposition Growth of Large-Area, Few-Layer MoTe2.

Transformation of Monolayer MoS 2 into Multiphasic MoTe 2 : Chalcogen Atom-Exchange Synthesis Route

Controllable Growth of Large-Area 1T′, 2H Ultrathin MoTe2 Films, and 1T′–2H In-Plane Homojunction

Persistence of Monoclinic Crystal Structure in Three-Dimensional Second-Order Topological Insulator Candidate 1T'-MoTe2 Thin Flake without Structural Phase transition

Phase evolution and superconductivity enhancement in Se-substituted MoTe$_2$ thin films

Engineering the Structural and Electronic Phases of MoTe2 Through W Substitution

Direct Multitier Synthesis of Two-Dimensional Semiconductor 2H-MoTe 2

Persistence of Monoclinic Crystal Structure in 3D Second‐Order Topological Insulator Candidate 1t′‐mote2 Thin Flake Without Structural Phase Transition

Persistence of Monoclinic Crystal Structure in 3D Second‐Order Topological Insulator Candidate 1 T ′‐MoTe 2 Thin Flake Without Structural Phase Transition

Raman scattering and anomalous Stokes anti-Stokes ratio in MoTe2 atomic layers