Origin of Ferrimagnetism and Ferroelectricity in Room-Temperature Multiferroic Ε−fe2o3

K. Xu,J. S. Feng,Z. P. Liu,H. J. Xiang
DOI: https://doi.org/10.1103/physrevapplied.9.044011
IF: 4.6
2018-01-01
Physical Review Applied
Abstract:Exploring and identifying room-temperature multiferroics is critical for developing better nonvolatile random-access memory devices. Recently, epsilon-Fe2O3 was found to be a promising room-temperature multi-ferroic with a large polarization and magnetization. However, the origin of the multiferroicity in epsilon-Fe2O3 is still puzzling. In this work, we perform density-functional-theory calculations to reveal that the spin frustration between tetrahedral-site Fe3+ spins gives rise to the unexpected ferrimagnetism. For the ferroelectricity, we identify a low-energy polarization switching path with an energy barrier of 85 meV/f:u: by performing a stochastic surface walking simulation. The switching of the ferroelectric polarization is achieved by swapping the tetrahedral Fe ion with the octahedral Fe ion, different from the usual case (e.g., in BaTiO3 and BiFeO3) where the coordination number remains unchanged after the switching. Our results not only confirm that epsilon-Fe2O3 is a promising room-temperature multiferroic but also provide guiding principles to design high-performance multiferroics.
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