Insertion Of Double Bond Pi-Bridges Of A-D-A Acceptors For High Performance Near-Infrared Polymer Solar Cells

Xiaojun Li,Tinghai Yan,Haijun Bin,Guangchao Han,Lingwei Xue,Feng Liu,Yuanping Yi,Zhi-Guo Zhang,Thomas P. Russell,Yongfang Li
DOI: https://doi.org/10.1039/c7ta07049g
IF: 11.9
2017-01-01
Journal of Materials Chemistry A
Abstract:Double bond phi-bridges were introduced into an A-D-A structured n-type organic semiconductor (n-OS) IDT-IC and a new n-OS acceptor SJ-IC was synthesized. In comparison with IDT-IC, the SJ-IC film shows significantly red-shifted absorption, improved electron mobility and tuned crystallinity, which make its blend film with a polymer donor easier to form appropriate phase separation. The polymer solar cells with polymer J61 as a donor and SJ-IC as an acceptor demonstrated a higher PCE of 9.27% with a higher J(sc) of 16.99 mA cm(-2), while the device based on J61/IDT-IC only delivered a PCE of 6.95% with a J(sc) of 13.70 mA cm(-2), which should be ascribed to the red-shifted and broadened absorption of SJ-IC. Therefore, inserting double bond pi-bridges into n-OS acceptor molecules is a simple and effective way to broaden and red shift their absorption to improve their photovoltaic performance. In addition, the near-infrared absorption of the SJ-IC acceptor should be beneficial to its future application in semitransparent and tandem PSCs.
What problem does this paper attempt to address?