Improved Photocurrent of PDPP3T Based Organic Schottky Junctions Via Solution-Processed HAT-CN and TPBi As Anode and Cathode Buffer Layers

Fang Yang,Chao Wang,Jun Le Yu,Yan Qiong Zheng,Bin Wei,Xi Feng Li,Xu Yong Yang
DOI: https://doi.org/10.1002/pssa.201700178
2017-01-01
Abstract:All-solution processed organic Schottky junctions (OSJs) with a near-infrared absorbing donor material poly(diketopyrrolopyrrole-terthiophene) (PDPP3T) of 5wt.% mixed into [6,6]-phenyl-C61-butyric acid methyl ester (PC61BM) were fabricated. Solution-processed 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile (s-HAT-CN) and N-arylbenzimidazoles (s-TPBi) served as the hole and electron transporting layer (HTL and ETL), which was usually prepared by thermal-evaporation. The power conversion efficiency (PCE) was improved from 1.15 to 1.45%, compared with the control device with traditional poly(3,4-ethylenedioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) and bathocuproine (BCP) as the HTL and ETL. It could be ascribed to the efficient hole extraction by s-HAT-CN and smoother surface, and thus, lower trap density of s-TPBi. s-HAT-CN showed a comparable transparency and higher hole mobility than PEDOT:PSS, and was proved to be an efficient and promising HTL for solution-processed OSJs. The dependence of OSJ performances on the evaporation- and solution-processed 4,7-diphenyl-1,10-phenanthroline (Bphen) and TPBi was comparably investigated. s-Bphen and s-TPBi devices both demonstrated a higher photocurrent relative to the evaporation-processed Bphen and TPBi devices.
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