Oxygen-Impurity-Induced Direct–Indirect Band Gap in Perovskite SrTaO2N

Xin Wang,Huiting Huang,Mengting Zhao,Weichang Hao,Zhaosheng Li,Zhigang Zou
DOI: https://doi.org/10.1021/acs.jpcc.7b01279
2017-01-01
Abstract:Oxynitride semiconductors are considered to be promising candidates for solar water splitting. In this work, we show that oxygen-rich SrTaO2N has a band gap with direct-indirect character through twin valence-band maximums (VBMs), resulting in good photoelectronic responses. Compared with the direct band gap of ideal SrTaO2N, the additional indirect VBM of the oxygen-rich solid solution was found to be due to strontium-oxygen hybridization, using orbital projections based on hybrid/GW density functional theory (DFT). This twin-VBM character was validated by strontium Kedge absorption through extended X-ray absorption fine structure (EXAFS) analysis. The twin-VBM character of the band structure can enhance the photoelectronic response and hole transport. Our findings provide a viable strategy for enhancing the solar water splitting performance of oxynitrides.
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