Graphene: High Detectivity Graphene‐Silicon Heterojunction Photodetector (small 5/2016)

Xinming Li,Miao Zhu,Mingde Du,Zheng Lv,Li Zhang,Yuanchang Li,Yao Yang,Tingting Yang,Xiao Li,Kunlin Wang,Hongwei Zhu,Ying Fang

DOI: https://doi.org/10.1002/smll.201670021

IF: 13.3

2016-01-01

Small

Abstract:SmallVolume 12, Issue 5 p. 549-549 Cover PictureFree Access Graphene: High Detectivity Graphene-Silicon Heterojunction Photodetector (Small 5/2016) Xinming Li, Corresponding Author Xinming Li National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. ChinaSearch for more papers by this authorMiao Zhu, Miao Zhu State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorMingde Du, Mingde Du National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. ChinaSearch for more papers by this authorZheng Lv, Zheng Lv Department of Chemical Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorLi Zhang, Li Zhang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorYuanchang Li, Yuanchang Li National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. ChinaSearch for more papers by this authorYao Yang, Yao Yang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorTingting Yang, Tingting Yang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorXiao Li, Xiao Li State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorKunlin Wang, Kunlin Wang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorHongwei Zhu, Corresponding Author Hongwei Zhu State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorYing Fang, Corresponding Author Ying Fang National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. China CAS Center for Excellence in Brain Science and Intelligence Technology, 320 Yue Yang Road, Shanghai, 200031 P. R. ChinaSearch for more papers by this author Xinming Li, Corresponding Author Xinming Li National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. ChinaSearch for more papers by this authorMiao Zhu, Miao Zhu State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorMingde Du, Mingde Du National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. ChinaSearch for more papers by this authorZheng Lv, Zheng Lv Department of Chemical Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorLi Zhang, Li Zhang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorYuanchang Li, Yuanchang Li National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. ChinaSearch for more papers by this authorYao Yang, Yao Yang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorTingting Yang, Tingting Yang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorXiao Li, Xiao Li State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorKunlin Wang, Kunlin Wang State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorHongwei Zhu, Corresponding Author Hongwei Zhu State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084 P. R. ChinaSearch for more papers by this authorYing Fang, Corresponding Author Ying Fang National Center for Nanoscience and Technology, Zhongguancun, Beijing, 100190 P. R. China CAS Center for Excellence in Brain Science and Intelligence Technology, 320 Yue Yang Road, Shanghai, 200031 P. R. ChinaSearch for more papers by this author First published: 01 February 2016 https://doi.org/10.1002/smll.201670021Citations: 10AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Graphical Abstract Highly sensitive photodetectors based on a graphene-silicon heterojunction with interface improvements are demonstrated by X. M. Li, H. W. Zhu, Y. Fang, and co-workers on page 595. By introducing a thin, interfacial oxide layer for dark current suppression, the graphene-silicon photodetector exhibits the highest-reported detectivity for a planar graphene-silicon heterojunction photodetector. This basic concept of a graphene-silicon heterojunction with interface improvements could be applied to other two-dimensional materials. Citing Literature Volume12, Issue5February 3, 2016Pages 549-549 RelatedInformation