Abstract:We analyze several factors that affect the linear output range of CMOS image sensors, including charge transfer time, reset transistor supply voltage, the capacitance of integration capacitor, the n-well doping of the pinned photodiode (PPD) and the output buffer. The test chips are fabricated with 0.18 μm CMOS image sensor (CIS) process and comprise six channels. Channels B1 and B2 are 10 μm pixels and channels B3–B6 are 20 μm pixels, with corresponding pixel arrays of 1 × 2560 and 1 × 1280 respectively. The floating diffusion (FD) capacitance varies from 10 fF to 23.3 fF, and two different designs were employed for the n-well doping in PPD. The experimental results indicate that optimizing the FD capacitance and PPD design can enhance the linear output range by 37% and 32%, respectively. For larger pixel sizes, extending the transfer gate (TG) sampling time leads to an increase of over 60% in the linear output range. Furthermore, optimizing the design of the output buffer can alleviate restrictions on the linear output range. The lower reset voltage for noise reduction does not exhibit a significant impact on the linear output range. Furthermore, these methods can enhance the linear output range without significantly amplifying the readout noise. These findings indicate that the linear output range of pixels is not only influenced by pixel design but also by operational conditions. Finally, we conducted a detailed analysis of the impact of PPD n-well doping concentration and TG sampling time on the linear output range. This provides designers with a clear understanding of how nonlinearity is introduced into pixels, offering valuable insight in the design of highly linear pixels.

Novel Method to Optimize the Column Random Telegraph Signal Performance in CMOS Image Sensor.

Research on dark noise features of CMOS image sensor

RTS Noise Reduction in CMOS Image Sensors Using Correlated Extrema Cancellation

14-Bit Column Readout Circuits with Single-to-differential PGA Using Intentional Offset and Two-Step Scaled-Reference SAR ADC for CMOS Image Sensors

Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

A 63.2μW 11-Bit Column Parallel Single-Slope ADC with Power Supply Noise Suppression for CMOS Image Sensors.

Random Telegraph Noise Degradation Caused by Hot Carrier Injection in a 0.8 μm-Pitch 8.3Mpixel Stacked CMOS Image Sensor

Analysis and a Reduction Method of Temporal Noise in the CMOS Image Sensor Readout Chain

High Consistency Ramp Design Method for Low Noise Column Level Readout Chain

Circuit Techniques to Improve Low-Light Characteristics and High-Accuracy Evaluation System for CMOS Image Sensor

Proton Irradiation-Induced Random Telegraph Signal Noise in a $2\text{k}\times2\text{k}$ 4T CMOS Active Pixel Sensor: Testing, Detection, and Modeling

Noise Improvement and High Dynamic Range in a CMOS Image Sensor With Shift Biasing Structure

CMOS Fixed Pattern Noise Elimination Based on Sparse Unidirectional Hybrid Total Variation

A Low Power Up/Down Double-Data-Rate Counter For Cmos Image Sensors

A Low-Power Column-Parallel Gain-Adaptive Single-Slope ADC for CMOS Image Sensors

A Comprehensive Methodology for Optimizing Read-Out Timing and Reference DAC Offset in High Frame Rate Image Sensing Systems

A Single Slope ADC with Row-Wise Noise Reduction Technique for CMOS Image Sensor

CMOS Fixed Pattern Noise Removal Based on Low Rank Sparse Variational Method

The Effect of Pixel Design and Operation Conditions on Linear Output Range of 4T CMOS Image Sensors

Leakage Current Non-Uniformity and Random Telegraph Signals in CMOS Image Sensor Floating Diffusions Used for In-Pixel Charge Storage

New Method for Optimizing the Detection of Low-Energy Soft X-rays (200–300 Ev) in a CMOS Detector