Abstract:Abstract Two-dimensional materials and their multilayers or heterostructures are promising candidates for optoelectronic devices. Their performance such as the transient current can be remarkably modified under irradiation since the atoms are extremely exposed. This effect, however, still lacks theoretical understanding. Using real-time time-dependent density functional theory extended to open systems for electrons and Ehrenfest dynamics for the moving ion, we explore the single-ion irradiation effects on graphene electronics. Perturbed electronic transport is identified in a field-effect transistor setup. The peak transient current is calculated as the key indicator to quantify the irradiation effects, the irradiation-energy dependence of which shows distinction from the stopping power that was well understood in recent studies. We find that the perturbation in transient current is driven by delocalized plasmonic excitation, in contrast to the localized electronic excitation that has a strong impact on the stopping power. The site dependence of transient current is determined by the local electron density and ionic charge, which highlights the roles of the lattice and electronic structures of materials. Following these understandings and the database developed for typical space-irradiation conditions, the device responses of graphene nanoelectronics can be modeled. These results and methods lay the ground for the material-informed design of nanoelectronics in, for example, space applications.

Decrease in Terahertz Conductivity of Graphene under Electron Beam Irradiations

Changed Graphene THz Conductivity Mapping under E-beam Excitation

Preliminary Experimental Study of Graphene-based Terahertz Radiation Excited by an Electron Beam

Modification on Single-Layer Graphene Induced by Low-Energy Electron-Beam Irradiation

Effect of electron-beam irradiation on graphene field effect devices

Modifying Electronic Transport Properties of Graphene by Electron Beam Irradiation

Monitoring Electron-Beam Irradiation Effects on Graphenes by Temporal Auger Electron Spectroscopy

Terahertz Conductivity Mapping of Graphene

Calculation and Study of Graphene Conductivity Based on Terahertz Spectroscopy

Accurate Local Modulation of Graphene Terahertz Metamaterials by Direct Electron Beam Irradiation

Observation of a Transient Decrease in Terahertz Conductivity of Single-Layer Graphene Induced by Ultrafast Optical Excitation

Effects of Defects and Thermal Treatment on the Properties of Graphene

Doping of Graphene Using Ion Beam Irradiation and the Atomic Mechanism

Transient Current in Graphene Transistors Under Single- Proton Irradiation

Observation of graphene surface plasmon polaritons excited by free electron beam

Current Transients in Graphene Electronics under Single‐Particle Irradiation

Optical conductivity measurement of chemically-doped graphene via terahertz time-domain spectroscopy

Time-dependent Quantum Monte Carlo Simulation of Electron Devices with Two-Dimensional Dirac Materials: A Genuine Terahertz Signature for Graphene

Total-Ionizing-Dose Effects on a Graphene X-Ray Detector Laser-Scribed from Graphene Oxide

Influence Of Irradiation Upon Few-Layered Graphene Using Electron-Beams And Gamma-Rays

Terahertz Radiation in Graphene Hyperbolic Medium Excited by an Electric Dipole.