Buildup of Sn@CNT Nanorods by In-Situ Thermal Plasma and the Electronic Transport Behaviors

Dongxing Wang,Da Li,Javid. Muhammad,Yuanliang Zhou,Xuefeng Zhang,Ziming Wang,Shanshan Lu,Xinglong Dong,Zhidong Zhang
DOI: https://doi.org/10.1007/s40843-018-9275-3
2018-01-01
Science China Materials
Abstract:Monocrystal Sn nanorods encapsulated in the multi-walled carbon nanotubes (Sn@CNT NRs), were fabricated by a facile arc-discharge plasma process, using bulk Sn as the raw target and methane as the gaseous carbon source. The typical Sn@CNT NRs are 40–90 nm in diameter and 400–500 nm in length. The CNTs protect the inner Sn nanorods from oxidation. Temperature dependent I – V curve and electronic resistance reveal that the dielectric behavior of Sn@CNT NRs is attributed to the multi-wall CNTs shell and follows Mott-David variable range hopping [ln R ( T )∝ T −1/4 ] model above the superconducting critical temperature of 3.69 K, with semiconductor–superconductor transition (SST). Josephson junction of Sn/CNT/Sn layered structure is responsible for the superconducting behavior of Sn@CNT NRs.
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